2SD1271A_2015 datasheet(1/1 Pages) JMNIC

Nome de Peças	2SD1271A_2015

Descrição Electrónicos	Silicon NPN Transistors

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Fabricante Electrônico	JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]

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Power Transistors

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2SD1271A

Silicon NPN Transistors

B C E

Features

﹒For Power Switching.

﹒With TO-220Fa package

﹒Complement to type 2SB946

Absolute Maximum Ratings Tc=25

SYMBOL

PARAMETER

RATING

UNIT

VCBO

Collector to base voltage

150

V

VCEO

Collector to emitter voltage

100

V

VEBO

Emitter to base voltage

7

V

ICP

Peak collector current

15

A

IC

Collector current

7

A

PC

Collector power dissipation

40

W

Tj

Junction temperature

150

Tstg

Storage temperature

-55~150

TO-220Fa

Electrical Characteristics Tc=25

SYMBOL

PARAMETER

CONDITIONS

MIN

Typ.

MAX

UNIT

ICBO

Collector cut-off current

VCB=100V; IE=0

10

uA

IEBO

Emitter cut-off current

VEB=5V; IC=0

50

uA

VCBO

Collector-base breakdown voltage

VCEO

Collector-emitter breakdown voltage

IC=10mA; IB=0

100

V

VEBO

Emitter-base breakdown voltage

VCE(sat-1)

Collector-emitter saturation voltages

IC=5A; IB=0.25A

0.5

V

VCE(sat-2)

Collector-emitter saturation voltages

hFE-1

Forward current transfer ratio

IC=0.1A; VCE=2V

45

hFE-2

Forward current transfer ratio

IC=3A; VCE=2V

60

260

VBE(sat)1

Base-emitter saturation voltages

IC=5A; IB=0.25A

1.5

V

VBE(sat)2

Base-emitter saturation voltages

fT

Transition frepuency

IC=0.5A; VCE=10V,f=10MHz

30

MHz

hFE-2 Classification

R

Q

P

60-120

90-180

130-260

J

JMnic

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