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1N3293A Folha de dados(PDF) 1 Page - GeneSiC Semiconductor, Inc.

Nome de Peças 1N3293A
Descrição Electrónicos  Silicon Standard Recovery Diode
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Fabricante Electrônico  GENESIC [GeneSiC Semiconductor, Inc.]
Página de início  http://www.genesicsemi.com/
Logo GENESIC - GeneSiC Semiconductor, Inc.

1N3293A Folha de dados(HTML) 1 Page - GeneSiC Semiconductor, Inc.

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VRRM = 200 V - 800 V
IF = 100 A
Features
• High Surge Capability
DO-8 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter
Symbol
1N3289A(R) 1N3291A(R)
Unit
Repetitive peak reverse voltage
VRRM
200
400
V
DC blocking voltage
VDC
200
400
V
Continuous forward current
IF
100
100
A
2. Reverse polarity (R): Stud is anode.
• Types from 200 V to 800 V VRRM
Silicon Standard
Recovery Diode
Conditions
800
800
600
1N3289A(R) thru 1N3294A(R)
TC ≤ 130 °C
1N3294A(R)
600
1N3293A(R)
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
100
100
Continuous forward current
IF
100
100
A
I2t for fusing
I2t
60 Hz Half wave
22000
22000
A
2sec
Operating temperature
Tj
-55 to 150
-55 to 150
°C
Storage temperature
Tstg
-55 to 150
-55 to 150
°C
Parameter
Symbol
1N3289A(R) 1N3291A(R)
Unit
Diode forward voltage
1.5
1.5
Thermal characteristics
Thermal resistance, junction -
case
RthJC
0.40
0.40
°C/W
-55 to 150
-55 to 150
TC = 25 °C, tp = 8.3 ms
Surge non-repetitive forward
current, Half Sine Wave
IF,SM
-55 to 150
1N3294A(R)
1N3293A(R)
0.40
0.40
1.5
1.5
V
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
mA
Reverse current
IF = 100 A, Tj = 130 °C
C
Conditions
2300
2300
-55 to 150
100
100
A
2300
2300
VR = VRRM, Tj = 130 °C
24
24
17
13
22000
22000
IR
VF
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
1


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