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BF1100_2015 Folha de dados(PDF) 10 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF1100_2015 Folha de dados(HTML) 10 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
10 / 14 page 1995 Apr 25 10 Philips Semiconductors Product specification Dual-gate MOS-FETs BF1100; BF1100R Fig.23 Input admittance as a function of frequency; typical values. VDS = 12 V; VG2 =4V. ID = 10 mA; Tamb =25 °C. handbook, halfpage 10 3 MLD176 102 10 10 1 10 2 10 1 y is (mS) f (MHz) b is g is Fig.24 Reverse transfer admittance and phase as a function of frequency; typical values. VDS = 12 V; VG2 =4V. ID = 10 mA; Tamb =25 °C. 10 3 MLD177 102 10 10 3 10 2 10 1 y rs 10 3 10 10 1 2 ( µS) f (MHz) yrs rs (deg) ϕ rs ϕ Fig.25 Forward transfer admittance and phase as a function of frequency; typical values. VDS = 12 V; VG2 =4V. ID = 10 mA; Tamb =25 °C. 10 3 MLD178 102 10 1 10 2 10 1 10 10 2 y fs (mS) y fs f (MHz) fs (deg) ϕ fs ϕ Fig.26 Output admittance as a function of frequency; typical values. VDS = 12 V; VG2 =4V. ID = 10 mA; Tamb =25 °C. handbook, halfpage 10 3 MLD179 102 10 10 1 10 1 10 2 yos (mS) f (MHz) bos gos |
Nº de peça semelhante - BF1100_2015 |
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Descrição semelhante - BF1100_2015 |
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