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FQD17N08LTF Folha de dados(PDF) 1 Page - Fairchild Semiconductor |
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FQD17N08LTF Folha de dados(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page November 2013 Thermal Characteristics Symbol Parameter FQD17N08LTM Unit RJC Thermal Resistance, Junction to Case, Max. 3.13 oC/W RJA Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 110 Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max. 50 FQD17N08L N-Channel QFET® MOSFET 80 V, 12.9 A, 100 mΩ Description www.fairchildsemi.com 1 This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features • 12.9 A, 80 V, RDS(on) = 100 mΩ (Max.) @ VGS = 10 V, ID = 6.45 A • Low Gate Charge (Typ. 8.8 nC) • Low Crss (Typ. 29 pF) • 100% Avalanche Tested Absolute Maximum Ratings T C = 25°C unless otherwise noted. D-PAK G S D G S D ©2000 Fairchild Semiconductor Corporation FQD17N08L Rev. C1 Symbol Parameter FQD17N08L TM Unit VDSS Drain-Source Voltage 80 V ID Drain Current - Continuous (TC = 25°C) 12.9 A - Continuous (TC = 100°C) 8.2 A IDM Drain Current - Pulsed (Note 1) 51.6 A VGSS Gate-Source Voltage ± 20 V EAS Single Pulsed Avalanche Energy (Note 2) 100 mJ IAR Avalanche Current (Note 1) 12.9 A EAR Repetitive Avalanche Energy (Note 1) 4.0 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 6.5 V/ns PD Power Dissipation (TA = 25°C) * 2.5 W Power Dissipation (TC = 25°C) 40 W - Derate above 25°C 0.32 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering, 1/8" from case for 5 seconds 300 °C |
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