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IRLU3103PBF Folha de dados(PDF) 1 Page - International Rectifier |
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IRLU3103PBF Folha de dados(HTML) 1 Page - International Rectifier |
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1 / 11 page  IRLR/U3103PbF HEXFET® Power MOSFET S D G VDSS = 30V RDS(on) = 0.019Ω ID = 55A
Description 12/7/04 Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 55 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 39 A IDM Pulsed Drain Current 220 PD @TC = 25°C Power Dissipation 107 W Linear Derating Factor 0.71 W/°C VGS Gate-to-Source Voltage ± 16 V EAS Single Pulse Avalanche Energy 240 mJ IAR Avalanche Current 34 A EAR Repetitive Avalanche Energy 11 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.4 RθJA Junction-to-Ambient (PCB mount) ** ––– 50 °C/W RθJA Junction-to-Ambient ––– 110 Thermal Resistance D-PAK TO-252AA I-PAK TO-251AA l Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR3103) l Straight Lead (IRLU3103) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through- hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. PD - 95085A www.irf.com 1 |
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Descrição semelhante - IRLU3103PBF |
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