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UPA800T Folha de dados(PDF) 1 Page - NEC |
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UPA800T Folha de dados(HTML) 1 Page - NEC |
1 / 6 page PACKAGE DRAWINGS (Unit: mm) SILICON TRANSISTOR The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • High Gain |S21e|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • A Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC4228) ORDERING INFORMATION PART NUMBER QUANTITY PACKING STYLE µPA800T Loose products Embossed tape 8 mm wide. Pin 6 (Q1 (50 PCS) Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to perforation side of the tape. µPA800T-T1 Taping products (3 KPCS/Reel) Remark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sample quantity is 50 pcs.) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 10 V Emitter to Base Voltage VEBO 1.5 V Collector Current IC 35 mA Total Power Dissipation PT 150 in 1 element mW 200 in 2 elementsNote Junction Temperature Tj 150 ˚C Storage Temperature Tstg –65 to +150 ˚C Note 110 mW must not be exceeded in 1 element. µPA800T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD PIN CONFIGURATION (Top View) © 1995 PRELIMINARY DATA SHEET Printed in Japan Document No. ID-3634 (O.D. No. ID-9141) Date Published April 1995 P The information in this document is subject to change without notice. 2.1±0.1 1.25±0.1 65 4 Q1 Q2 12 3 PIN CONNECTIONS 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Emitter (Q2) 5. Base (Q2) 6. Base (Q1) |
Nº de peça semelhante - UPA800T |
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Descrição semelhante - UPA800T |
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