BUZ11 datasheet(2/6 Pages) INTERSIL

Nome de Peças	BUZ11

Descrição Electrónicos	30A, 50V, 0.040 Ohm, N-Channel Power MOSFET

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Fabricante Electrônico	INTERSIL [Intersil Corporation]

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2 / 6 page

4-6

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

BUZ11

UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS

50

V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

50

V

Continuous Drain Current

TC = 30

oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

D

30

A

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

120

A

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

±20

V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD

75

W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.6

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

oC

DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

E

IEC Climatic Category - DIN IEC 68-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

55/150/56

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

260

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 125oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V

50

-

V

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 1mA (Figure 9)

2.1

3

4

V

Zero Gate Voltage Drain Current

IDSS

TJ = 25

oC, V

DS = 50V, VGS = 0V

-

20

250

µA

TJ = 125

oC, V

DS = 50V, VGS = 0V

-

100

1000

µA

Gate to Source Leakage Current

IGSS

VGS = 20V, VDS = 0V

-

10

100

nA

Drain to Source On Resistance (Note 2)

rDS(ON)

ID = 15A, VGS = 10V (Figure 8)

-

0.03

0.04

Ω

Forward Transconductance (Note 2)

gfs

VDS = 25V, ID = 15A (Figure 11)

4

8

-

S

Turn-On Delay Time

td(ON)

VCC = 30V, ID ≈ 3A, VGS = 10V, RGS = 50Ω,

RL = 10Ω

-30

45

ns

Rise Time

tr

-

70

110

ns

Turn-Off Delay Time

td(OFF)

-

180

230

ns

Fall Time

tf

-

130

170

ns

Input Capacitance

CISS

VDS = 25V, VGS = 0V, f = 1MHz (Figure 10)

-

1500

2000

pF

Output Capacitance

COSS

-

750

1100

pF

Reverse Transfer Capacitance

CRSS

-

250

400

pF

Thermal Resistance Junction to Case

RθJC

≤ 1.67

oC/W

Thermal Resistance Junction to Ambient

RθJA

≤ 75

oC/W

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Continuous Source to Drain Current

ISD

TC = 25

oC-

-

30

A

Pulsed Source to Drain Current

ISDM

TC = 25

oC

-

120

A

Source to Drain Diode Voltage

VSD

TJ = 25

oC, I

SD = 60A, VGS = 0V

-

1.7

2.6

V

Reverse Recovery Time

trr

TJ = 25

oC, I

SD = 30A, dISD/dt = 100A/µs,

VR = 30V

-

200

-

ns

Reverse Recovery Charge

QRR

-

0.25

-

µC

NOTES:

2. Pulse Test: Pulse width

≤ 300ms, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

BUZ11

Nº de peça semelhante - BUZ11

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Fairchild Semiconductor	BUZ11	81Kb / 6P	30A, 50V, 0.040 Ohm, N-Channel Power MOSFET
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Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Fairchild Semiconductor	BUZ11	81Kb / 6P	30A, 50V, 0.040 Ohm, N-Channel Power MOSFET
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Fairchild Semiconductor	IRF540N	138Kb / 10P	33A, 100V, 0.040 Ohm, N-Channel, Power MOSFET
Intersil Corporation	HUF75631P3	343Kb / 9P	33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFET
Fairchild Semiconductor	RFG40N10	371Kb / 6P	40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs
Intersil Corporation	HUF76419P3	334Kb / 9P	27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Intersil Corporation	RFG40N10	51Kb / 6P	40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs
Fairchild Semiconductor	HUF76419P3	215Kb / 10P	27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Fairchild Semiconductor	HUFA75631P3	201Kb / 10P	33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs

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