Os motores de busca de Datasheet de Componentes eletrônicos
  Portuguese  ▼
ALLDATASHEETPT.COM

X  

FSTYC9055R1 Folha de dados(PDF) 6 Page - Intersil Corporation

Nome de Peças FSTYC9055R1
Descrição Electrónicos  Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrônico  INTERSIL [Intersil Corporation]
Página de início  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

FSTYC9055R1 Folha de dados(HTML) 6 Page - Intersil Corporation

  FSTYC9055R1 Datasheet HTML 1Page - Intersil Corporation FSTYC9055R1 Datasheet HTML 2Page - Intersil Corporation FSTYC9055R1 Datasheet HTML 3Page - Intersil Corporation FSTYC9055R1 Datasheet HTML 4Page - Intersil Corporation FSTYC9055R1 Datasheet HTML 5Page - Intersil Corporation FSTYC9055R1 Datasheet HTML 6Page - Intersil Corporation FSTYC9055R1 Datasheet HTML 7Page - Intersil Corporation FSTYC9055R1 Datasheet HTML 8Page - Intersil Corporation  
Zoom Inzoom in Zoom Outzoom out
 6 / 8 page
background image
6
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MAX
UNITS
Gate to Source Leakage Current
IGSS
VGS = ±20V
±20 (Note 7)
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 80% Rated Value
±25 (Note 7)
µA
Drain to Source On Resistance
rDS(ON)
TC = 125
oC at Rated I
D
±20% (Note 8)
Gate Threshold Voltage
VGS(TH)
ID = 1.0mA
±20% (Note 8)
V
NOTES:
7. Or 100% of Initial Reading (whichever is greater).
8. Of Initial Reading.
Screening Information
TEST
JANTXV EQUIVALENT
JANS EQUIVALENT
Gate Stress
VGS = -30V, t = 250µsVGS = -30V, t = 250µs
Pind
Optional
Required
Pre Burn-In Tests (Note 9)
MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25oC)
MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25oC)
Steady State Gate
Bias (Gate Stress)
MIL-STD-750, Method 1042, Condition B
VGS = 80% of Rated Value,
TA = 150
oC, Time = 48 hours
MIL-STD-750, Method 1042, Condition B
VGS = 80% of Rated Value,
TA = 150
oC, Time = 48 hours
Interim Electrical Tests (Note 9)
All Delta Parameters Listed in the Delta Tests
and Limits Table
All Delta Parameters Listed in the Delta Tests
and Limits Table
Steady State Reverse
Bias (Drain Stress)
MIL-STD-750, Method 1042, Condition A
VDS = 80% of Rated Value,
TA = 150
oC, Time = 160 hours
MIL-STD-750, Method 1042, Condition A
VDS = 80% of Rated Value,
TA = 150
oC, Time = 240 hours
PDA
10%
5%
Final Electrical Tests (Note 9)
MIL-S-19500, Group A, Subgroup 2
MIL-S-19500, Group A,
Subgroups 2 and 3
NOTE:
9. Test limits are identical pre and post burn-in.
Additional Screening Tests
PARAMETER
SYMBOL
TEST CONDITIONS
MAX
UNITS
Safe Operating Area
SOA
VDS = -48V, t = 10ms
9.0
A
Unclamped Inductive Switching
IAS
VGS(PEAK) = -15V, L = 0.1mH
192
A
Thermal Response
∆VSD
tH = 10ms; VH = -25V; IH = 4A
65
mV
Thermal Impedance
∆VSD
tH = 500ms; VH = -20V; IH = 4A
135
mV
FSTYC9055D, FSTYC9055R


Nº de peça semelhante - FSTYC9055R1

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
Schurter Inc.
FST SCHURTER-FST Datasheet
75Kb / 2P
   Miniature Fuses Type FST 6,332 time-lag T
logo
Ohmite Mfg. Co.
FST OHMITE-FST Datasheet
246Kb / 1P
   Thin Film Temperature Sensor
logo
Vishay Siliconix
FST VISHAY-FST Datasheet
154Kb / 6P
   Wirewound Resistor, Industrial Power, Silicone Coated, Fixed Tubular
logo
Gamewell-FCI by Honeywe...
FST-10 GAMEWELL-FCI-FST-10 Datasheet
53Kb / 2P
   Duct Housing, 4-wire, less detector head
FST-2 GAMEWELL-FCI-FST-2 Datasheet
53Kb / 2P
   Duct Housing, 4-wire, less detector head
More results

Descrição semelhante - FSTYC9055R1

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
Intersil Corporation
FSTJ9055D INTERSIL-FSTJ9055D Datasheet
72Kb / 8P
   Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
June 2000
FSYE913A0D INTERSIL-FSYE913A0D Datasheet
73Kb / 9P
   Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
February 2000
FSYE923A0D INTERSIL-FSYE923A0D Datasheet
70Kb / 8P
   Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
June 2000
FSYC9160D INTERSIL-FSYC9160D Datasheet
61Kb / 8P
   Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
July 1998
FSYA9150D INTERSIL-FSYA9150D Datasheet
56Kb / 8P
   Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
October 1998
FSYC9055D INTERSIL-FSYC9055D Datasheet
51Kb / 8P
   Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
July 1999
FSJ163D INTERSIL-FSJ163D Datasheet
56Kb / 8P
   Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
June 1999
FSYC055D INTERSIL-FSYC055D Datasheet
49Kb / 8P
   Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
July 1998
FSYE430D INTERSIL-FSYE430D Datasheet
58Kb / 8P
   Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
June 1999
FSYA450D INTERSIL-FSYA450D Datasheet
56Kb / 8P
   Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
March 1999
More results


Html Pages

1 2 3 4 5 6 7 8


Folha de dados Download

Go To PDF Page


Ligação URL




Privacy Policy
ALLDATASHEETPT.COM
ALLDATASHEET é útil para você?  [ DONATE ] 

Sobre Alldatasheet   |   Publicidade   |   Contato conosco   |   Privacy Policy   |   roca de Link   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com