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2SK1581-3 Folha de dados(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Nome de Peças 2SK1581-3
Descrição Electrónicos  N-Channel MOSFET
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Fabricante Electrônico  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Página de início  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SK1581-3 Folha de dados(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
www.kexin.com.cn
1
MOSFET
N-Channel MOSFET
2SK1581
Features
VDS (V) = 16V
ID = 0.2 A
RDS(ON) < 5Ω (VGS = 2.5V)
RDS(ON) < 3Ω (VGS = 4V)
Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDS
16
Gate-Source Voltage
VGS
±
16
Continuous Drain Current
ID
200
Pulsed Drain Current
(Note.1)
IDM
400
Power Dissipation
Ta = 25℃
PD
200
mW
Junction Temperature
TJ
150
Operating Temperature
Topt
-55 to 80
Storage Temperature Range
Tstg
-55 to 150
V
mA
Note.1: PW ≤ 10ms,Duty Cycle ≤ 50%
Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VDSS
ID=250μA, VGS=0V
16
V
Zero Gate Voltage Drain Current
IDSS
VDS=16V, VGS=0V
1
uA
Gate-Body Leakage Current
IGSS
VDS=0V, VGS=±3V
±
5
uA
Gate Cut-off Voltage
VGS(off)
VDS=3 V ID=10uA
0.8
1.6
V
VGS=2.5V, ID=1m A
5
VGS=4V, ID=1m A
3
Forward Transconductance
gFS
VDS=3V, ID=10m A
20
70
mS
Input Capacitance
Ciss
27
Output Capacitance
Coss
37
Reverse Transfer Capacitance
Crss
8
Turn-On DelayTime
td(on)
100
Turn-On Rise Time
tr
300
Turn-Off DelayTime
td(off)
210
Turn-Off Fall Time
tf
240
pF
Static Drain-Source On-Resistance
RDS(On)
Ω
VGS(on)=3V, VDS=3V, ID=10mA,
RL=300Ω,RG=10Ω
VGS=0V, VDS=3V, f=1MHz
ns
Marking
Marking
G14
1. Gate
2. Source
3. Drain
0.4 +0.1
-0.1
2.9 +0.2
-0.1
0.95 +0.1
-0.1
1.9 +0.1
-0.2
1
2
3
Unit: mm
SOT-23-3
0.15 +0.02
-0.02


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