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MTB060N15J3-0-T3-G Folha de dados(PDF) 5 Page - Cystech Electonics Corp.

Nome de Peças MTB060N15J3-0-T3-G
Descrição Electrónicos  N -Channel Enhancement Mode Power MOSFET
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Fabricante Electrônico  CYSTEKEC [Cystech Electonics Corp.]
Página de início  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB060N15J3-0-T3-G Folha de dados(HTML) 5 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C970J3
Issued Date : 2014.06.14
Revised Date : 2014.06.16
Page No. : 5/9
MTB060N15J3
CYStek Product Specification
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
10
100
1000
10000
0.1
1
10
100
VDS, Drain-Source Voltage(V)
C oss
Ciss
Crss
Threshold Voltage vs Junction Tempearture
0.4
0.6
0.8
1
1.2
1.4
-65
-35
-5
25
55
85
115
145
175
Tj, Junction Temperature(°C)
ID=250μ
A
ID=1mA
Forward Transfer Admittance vs Drain Current
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
ID, Drain Current(A)
Ta=25°C
Pulsed
VDS=10V
Gate Charge Characteristics
0
2
4
6
8
10
0
10
203040
5060
7080
Qg, Total Gate Charge(nC)
VDS=120V
ID=16A
Maximum Safe Operating Area
0.01
0.1
1
10
100
0.1
1
10
100
1000
VDS, Drain-Source Voltage(V)
TC=25°C, Tj=175°C
VGS=10V, θJC=3°C/W
Single Pulse
DC
100ms
RDSON
Limited
1s
100μs
1ms
10ms
Maximum Drain Current vs Case Temperature
0
2
4
6
8
10
12
14
16
18
20
25
50
75
100
125
150
175
TC, Case Temperature(°C)
VGS=10V, RθJC=3°C/W


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