Os motores de busca de Datasheet de Componentes eletrônicos
  Portuguese  ▼
ALLDATASHEETPT.COM

X  

IRF350 Folha de dados(PDF) 2 Page - Intersil Corporation

Nome de Peças IRF350
Descrição Electrónicos  15A, 400V, 0.300 Ohm, N-Channel Power MOSFET
Download  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrônico  INTERSIL [Intersil Corporation]
Página de início  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

IRF350 Folha de dados(HTML) 2 Page - Intersil Corporation

  IRF350 Datasheet HTML 1Page - Intersil Corporation IRF350 Datasheet HTML 2Page - Intersil Corporation IRF350 Datasheet HTML 3Page - Intersil Corporation IRF350 Datasheet HTML 4Page - Intersil Corporation IRF350 Datasheet HTML 5Page - Intersil Corporation IRF350 Datasheet HTML 6Page - Intersil Corporation IRF350 Datasheet HTML 7Page - Intersil Corporation  
Zoom Inzoom in Zoom Outzoom out
 2 / 7 page
background image
2
Absolute Maximum Ratings
TC = 25
oC, Unless Otherwise Specified
IRF350
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
400
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
400
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
15
9.0
A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
60
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
150
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.2
W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
700
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Paackage Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25
oC to 125oC.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA, (Figure 10)
400
-
-
V
Gate to Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250µA
2.0
-
4.0
V
Zero-Gate Voltage Drain Current
IDSS
VDS = Rated BVDSS, VGS = 0V
-
-
25
µA
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125
oC
-
-
250
µA
On-State Drain Current (Note 2)
ID(ON)
VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
15
-
-
A
Gate to Source Leakage Current
IGSS
VGS = ±20V
-
-
±100
nA
Drain to Source On Resistance (Note 2)
rDS(ON)
VGS = 10V, ID = 8.0A, (Figures 8, 9)
-
0.25
0.300
Forward Transconductance (Note 2)
gfs
VDS > ID(ON) x rDS(ON)MAX, ID = 8A, (Figure 12)
8
10
-
S
Turn-On Delay Time
tD(ON)
VDD = 180V, ID ≈ 8.0A, RG = 4.7Ω, RL = 22.5Ω,
VGS = 10V, (Figures 17, 18)
MOSFET switching times are essentially indepen-
dent of operating temperature
-
-
35
ns
Rise Time
tr
-
-
65
ns
Turn-Off Delay Time
tD(OFF)
-
-
150
ns
Fall Time
tf
-
-
75
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Qg
VGS = 10V, ID = 18A, VDS = 0.8 x Rated BVDSS,
IG(REF) = 1.5mA (Figures 14, 19, 20)
Gate charge is essentially independent of operating
temperature
-
79
120
nC
Gate to Source Charge
Qgs
-38
-
nC
Gate to Drain “Miller” Charge
Qgd
-41
-
nC
Input Capacitance
CISS
VGS = 0V, VDS = 25V, f = 1.0MHz, (Figure 11)
-
2000
-
pF
Output Capacitance
COSS
-
400
-
pF
Reverse Transfer Capacitance
CRSS
-
100
-
pF
Internal Drain Inductance
LD
Measured Between the
Contact Screw on Head-
er that is Closer to
Source and Gate Pins
and Center of Die
Modified MOSFET Sym-
bol Showing the Internal
Devices
Inductances
-
5.0
-
nH
Internal Source Inductance
LS
Measured From The
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad
-
12.5
-
nH
Thermal Resistance Junction to Case
RθJC
-
0.83
-
oC/W
Thermal Resistance Junction to Ambient
RθJA
Free Air Operation
-
-
30
oC/W
LS
LD
G
D
S
IRF350


Nº de peça semelhante - IRF350

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
Samsung semiconductor
IRF350 SAMSUNG-IRF350 Datasheet
212Kb / 5P
   N-CHANNEL POWER MOSFETS
logo
Fairchild Semiconductor
IRF350 FAIRCHILD-IRF350 Datasheet
117Kb / 4P
   N-Channel Power MOSFETs, 15A, 350V/400V
logo
International Rectifier
IRF350 IRF-IRF350 Datasheet
144Kb / 7P
   TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.300ohm, Id=14A)
logo
Seme LAB
IRF350 SEME-LAB-IRF350 Datasheet
43Kb / 2P
   N-CHANNEL POWER MOSFET
logo
New Jersey Semi-Conduct...
IRF350 NJSEMI-IRF350 Datasheet
91Kb / 2P
   N-CHANNEL POWER MOSFETS
More results

Descrição semelhante - IRF350

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
Intersil Corporation
IRFP350 INTERSIL-IRFP350 Datasheet
57Kb / 7P
   16A, 400V, 0.300 Ohm, N-Channel Power MOSFET
logo
Unisonic Technologies
15N40 UTC-15N40 Datasheet
220Kb / 6P
   15A, 400V N-CHANNEL POWER MOSFET
logo
Fairchild Semiconductor
FDP15N40 FAIRCHILD-FDP15N40 Datasheet
256Kb / 9P
   N-Channel MOSFET 400V, 15A, 0.3廓
logo
Intersil Corporation
IRF730 INTERSIL-IRF730 Datasheet
54Kb / 7P
   5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET
July 1999
logo
Unisonic Technologies
UF730 UTC-UF730 Datasheet
167Kb / 6P
   5.5A, 400V, 1.0 OHM, N-CHANNEL POWER MOSFET
logo
Intersil Corporation
BUZ76A INTERSIL-BUZ76A Datasheet
42Kb / 5P
   2.6A, 400V, 2.500 Ohm, N-Channel Power MOSFET
October 1998
logo
Unisonic Technologies
UF740 UTC-UF740 Datasheet
163Kb / 6P
   10A, 400V, 0.55 OHM, N-CHANNEL POWER MOSFET
logo
Intersil Corporation
BUZ351 INTERSIL-BUZ351 Datasheet
10Kb / 1P
   11.5A, 400V, 0.400 Ohm, N-Channel Power MOSFET
October 1998
BUZ60B INTERSIL-BUZ60B Datasheet
42Kb / 5P
   4.5A, 400V, 1.500 Ohm, N-Channel Power MOSFET
October 1998
IRF740 INTERSIL-IRF740 Datasheet
56Kb / 7P
   10A, 400V, 0.550 Ohm, N-Channel Power MOSFET
More results


Html Pages

1 2 3 4 5 6 7


Folha de dados Download

Go To PDF Page


Ligação URL




Privacy Policy
ALLDATASHEETPT.COM
ALLDATASHEET é útil para você?  [ DONATE ] 

Sobre Alldatasheet   |   Publicidade   |   Contato conosco   |   Privacy Policy   |   roca de Link   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com