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2SK1629-E1-E Folha de dados(PDF) 1 Page - Renesas Technology Corp |
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2SK1629-E1-E Folha de dados(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page R07DS1197EJ0200 Rev.2.00 Page 1 of 6 Mar 26, 2014 Preliminary Datasheet 2SK1629-E1-E 500V - 30A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.22 Ω typ. (at I D = 15 A, VGS= 10 V, Ta = 25°C) • High speed switching • Low drive current • Suitable for switching regulator and DC-DC converter Outline 1. Gate 2. Drain 3. Source 1 2 3 D G S RENESAS Package code: PRSS0003ZC-A (Package name:TO-264) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to Source voltage VDSS 500 V Gate to Source voltage VGSS ±30 V Drain current ID 30 A Drain peak current ID (pulse) Note1 120 A Body-Drain diode reverse Drain current IDR 30 A Channel dissipation Pch Note2 200 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25 °C R07DS1197EJ0200 Rev.2.00 Mar 26, 2014 |
Nº de peça semelhante - 2SK1629-E1-E_15 |
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Descrição semelhante - 2SK1629-E1-E_15 |
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