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BD135 Folha de dados(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Nome de Peças BD135
Descrição Electrónicos  NPN Plastic Encapsulated Transistor
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Fabricante Electrônico  SECOS [SeCoS Halbleitertechnologie GmbH]
Página de início  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

BD135 Folha de dados(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

  BD135_15 Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH BD135_15 Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH  
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BD135 / BD137 / BD139
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
07-Mar-2012 Rev. A
Page 1 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
3
Base
1
Emitter
Collector
2
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High current
Complement to BD136, BD138 and BD140
CLASSIFICATION OF hFE (1)
Product-Rank
BD135-6
BD135-10
BD135-16
Product-Rank
BD137-6
BD137-10
BD137-16
Product-Rank
BD139-6
BD139-10
BD139-16
Range
40~100
63~160
100~250
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
BD135
VCBO
45
V
BD137
60
BD139
80
Collector to Emitter Voltage
BD135
VCEO
45
V
BD137
60
BD139
80
Emitter to Base Voltage
VEBO
5
V
Collector Current-Continuous
IC
1.5
A
Collector Power Dissipation
PC
1.25
W
Thermal Resistance From Junction To Ambient
RθJA
100
°C / W
Junction, Storage Temperature
TJ, TSTG
150, -55~150
°C
1
1
1
1Emitter
2
2
2
2Collector
3
3
3
3Base
TO-126
C
D
B
A
E
N
F
L
G
K
J
H
M
REF.
Millimeter
REF.
Millimeter
Min.
Max.
Min.
Max.
A
7.40
7.80
H
1.10
1.50
B
2.50
2.90
J
0.45
0.60
C
10.60
11.00
K
0.66
0.86
D
15.30
15.70
L
2.10
2.30
E
3.70
3.90
M
1.17
1.37
F
3.90
4.10
N
3.00
3.20
G
2.29 TYP.


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