SILICON TRANSISTOR

FEATURES

PACKAGE DRAWINGS

•

Low Noise, High Gain

(Unit: mm)

•

Operable at Low Voltage

•

Small Feed-back Capacitance

•

Built-in 2 Transistors (2

× 2SC4958)

ORDERING INFORMATION

PART NUMBER

QUANTITY

PACKING STYLE

µPA805T

Loose products

Embossed tape 8 mm wide. Pin 6 (Q1

(50 PCS)

Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)

face to perforation side of the tape.

µPA805T-T1

Taping products

(3 KPCS/Reel)

Remark

If you require an evaluation sample, please contact an NEC

Sales Representative. (Unit sample quantity is 50 pcs.)

°C)

PARAMETER

SYMBOL

RATING

UNIT

Collector to Base Voltage

9V

Collector to Emitter Voltage

6V

Emitter to Base Voltage

2V

Collector Current

10

mA

Total Power Dissipation

60 in 1 element

mW

Junction Temperature

150

˚C

Storage Temperature

–65 to +150

˚C

Note

110 mW must not be exceeded in 1 element.

This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.

The information in this document is subject to change without notice.

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

(WITH BUILT-IN 2 ELEMENTS) MINI MOLD

PIN CONFIGURATION (Top View)

©

1995

PRELIMINARY DATA SHEET

Printed in Japan

Document No. ID-3639

(O.D. No. ID-9146)

Date Published April 1995 P

2.1±0.1

1.25±0.1

65

4

12

3

PIN CONNECTIONS

1. Collector (Q1)

2. Emitter (Q1)

3. Collector (Q2)

4. Emitter (Q2)

5. Base (Q2)

6. Base (Q1)