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TMP12 Folha de dados(PDF) 10 Page - Analog Devices

Nome de Peças TMP12
Descrição Electrónicos  Airflow and Temperature Sensor
Download  12 Pages
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Fabricante Electrônico  AD [Analog Devices]
Página de início  http://www.analog.com
Logo AD - Analog Devices

TMP12 Folha de dados(HTML) 10 Page - Analog Devices

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REV. B
TMP12
–10–
current needed for the coil. In some cases, an external driving
transistor should be used to remove the current load on the
TMP12 as explained in the next section.
Power FETs are popular for handling a variety of high current
dc loads. Figure 11 shows the TMP12 driving a P-channel
MOSFET transistor for a simple heater circuit. When the output
transistor turns on, the gate of the MOSFET is pulled down to
approximately 0.6 V, turning it on. For most MOSFETs, a
gate-to-source voltage or Vgs on the order of –2 V to –5 V is
sufficient to turn the device on. Figure 12 shows a similar circuit
for turning on an N-channel MOSFET, except that now the
gate-to-source voltage is positive. For this reason, an external
transistor must be used as an inverter so that the MOSFET will
turn on when the trip point pulls down.
NC
NC = NO CONNECT
5V
2.4k
(12V)
1.2k
(6V)
5%
HEATING
ELEMENT
IRFR9024
OR EQUIV
+
V+
8
7
6
5
1
2
3
4
TEMPERATURE
SENSOR AND
VOLTAGE
REFERENCE
VREF
WINDOW
COMPARATOR
HYSTERESIS
GENERATOR
100
TMP12
VPTAT
Figure 11. Driving a P-Channel MOSFET
NC
NC = NO CONNECT
5V
HEATING
ELEMENT
4.7k
4.7k
2N1711
IRF130
V+
8
7
6
5
1
2
3
4
TEMPERATURE
SENSOR AND
VOLTAGE
REFERENCE
VREF
WINDOW
COMPARATOR
HYSTERESIS
GENERATOR
100
TMP12
VPTAT
Figure 12. Driving an N-Channel MOSFET
Isolated gate bipolar transistors (IGBTs) combine many of the
benefits of power MOSFETs with bipolar transistors and are
used for a variety of high power applications. Because IGBTs
have a gate similar to MOSFETs, turning the devices on and off
is relatively simple as shown in Figure 13. The turn-on voltage
for the IGBT shown (IRGBC40S) is between 3 V and 5.5 V.
This part has a continuous collector current rating of 50 A and a
maximum collector to emitter voltage of 600 V, enabling it to
work in very demanding applications.
NC
NC = NO CONNECT
5V
4.7k
4.7k
2N1711
IRGBC40S
MOTOR
CONTROL
V+
8
7
6
5
1
2
3
4
TEMPERATURE
SENSOR AND
VOLTAGE
REFERENCE
VREF
WINDOW
COMPARATOR
HYSTERESIS
GENERATOR
100
TMP12
VPTAT
Figure 13. Driving an IGBT
The last class of high power devices discussed here are thyristors,
which include SCRs and Triacs. Triacs are a useful alternative
to relays for switching ac line voltages. The 2N6073A shown
in Figure 14 is rated to handle 4 A (rms). The opto-isolated
MOC3021 Triac shown features excellent electrical isolation
from the noisy ac line and complete control over the high power
Triac with only a few additional components.
NC = NO CONNECT
NC
5V
300
V+ = 5V
MOC3021
150
LOAD
AC
2N6073A
8
7
6
5
1
2
3
4
TEMPERATURE
SENSOR AND
VOLTAGE
REFERENCE
VREF
WINDOW
COMPARATOR
HYSTERESIS
GENERATOR
100
TMP12
VPTAT
Figure 14. Controlling the 2N6073A Triac
High Current Switching
As mentioned earlier, internal dissipation due to large loads on
the TMP12 outputs will cause some temperature error due to
self-heating. External transistors buffer the load from the TMP12
so that virtually no power is dissipated in the internal transistors
and minimal self-heating occurs. This section shows several
examples using external transistors. The simplest case uses a
single transistor on the output to invert the output signal as shown
in Figure 15. When the open-collector of the TMP12 turns on and
pulls the output down, the external transistor Q1’s base will be
pulled low, turning off the transistor. Another transistor can be
added to reinvert the signal as shown in Figure 16. When the
output of the TMP12 is pulled down, the first transistor, Q1,
turns off and its collector goes high, which turns Q2 on, pulling
its collector low. Thus, the output taken from the collector of Q2
is identical to the output of the TMP12. By picking a transis-
tor that can accommodate large amounts of current, many
high-power devices can be switched.


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