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PZT559A Folha de dados(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Nome de Peças PZT559A
Descrição Electrónicos  Silicon Planar Medium Power Transistor
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Fabricante Electrônico  SECOS [SeCoS Halbleitertechnologie GmbH]
Página de início  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

PZT559A Folha de dados(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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PZT559A
PNP Silicon
Silicon Planar Medium Power Transistor
Elektronische Bauelemente
28-Apr-2011 Rev. A
Page 1 of 4
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
1
Base
3
Emitter
Collector
2
4
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The PZT559A is designed for general purpose switching
and amplifier applications.
FEATURES
4 Amps continuous current, up to 10 Amps peak current.
Excellent gain characteristic specified up to 3 Amps
Very low saturation voltages
MARKING
PACKAGE INFORMATION
Package
MPQ
Leader Size
SOT-223
2.5K
13’ inch
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
-180
V
Collector to Emitter Voltage
VCEO
-140
V
Emitter to Base Voltage
VEBO
-7
V
Collector Current (DC)
IC
-4
A
Collector Current (Pulse)
ICM
-10
A
Total Power Dissipation
1
PD
3
W
Total Power Dissipation
2
1.6
W
Junction, Storage Temperature
TJ, TSTG
+150, -55~150
Notes:
1. Surface mounted on 52mm x 52mm x 1.6mm copper pad of FR4 board.
2. Surface mounted on 25mm x 25mm x 1.6mm copper pad of FR4 board.
REF.
Millimeter
REF.
Millimeter
Min.
Max.
Min.
Max.
A
6.30
6.70
G
0.02
0.10
B
6.70
7.30
H
1.50
2.00
C
3.30
3.70
J
0.25
0.35
D
1.42
1.90
K
0.85
1.05
E
4.60 REF.
L
2.30 REF.
F
0.60
0.80
M
2.90
3.10
I
0.02
0.10
N
13 TYP.
O
0
°
10
°
SOT-223
559A
Date code


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