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IRF1902 Folha de dados(PDF) 2 Page - International Rectifier

Nome de Peças IRF1902
Descrição Electrónicos  Power MOSFET(Vdss=20V)
Download  9 Pages
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRF1902 Folha de dados(HTML) 2 Page - International Rectifier

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IRF1902
2
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Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.2
V
TJ = 25°C, IS = 2.5A, VGS = 0V
‚
trr
Reverse Recovery Time
–––
38
57
ns
TJ = 25°C, IF = 2.5A
Qrr
Reverse Recovery Charge
–––
42
63
nC
di/dt = 100A/µs
‚
Source-Drain Ratings and Characteristics
A
17
–––
–––
–––
4.2
–––
 Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
ƒ Surface mounted on 1 in square Cu board
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
20
–––
–––
VVGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.019 –––
V/°C
Reference to 25°C, ID = 1mA
–––
–––
85
VGS = 4.5V, ID = 4.0A
‚
–––
–––
170
VGS = 2.7V, ID = 3.2A
‚
VGS(th)
Gate Threshold Voltage
0.70
–––
–––
VVDS = VGS, ID = 250µA
gfs
Forward Transconductance
5.6
–––
–––
SVDS = 10V, ID = 4.0A
–––
–––
1.0
VDS = 16V, VGS = 0V
–––
–––
25
VDS = 16V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 12V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = -12V
Qg
Total Gate Charge
–––
5.0
7.5
ID = 4.2A
Qgs
Gate-to-Source Charge
–––
1.2
–––
nC
VDS = 10V
Qgd
Gate-to-Drain ("Miller") Charge
–––
1.8
–––
VGS = 4.5V
td(on)
Turn-On Delay Time
–––
5.9
–––
VDD = 10V
‚
tr
Rise Time
–––
13
–––
ID = 1.0A
td(off)
Turn-Off Delay Time
–––
23
–––
RG = 53Ω
tf
Fall Time
–––
19
–––
VGS = 4.5V
Ciss
Input Capacitance
–––
310
–––
VGS = 0V
Coss
Output Capacitance
–––
130
–––
pF
VDS = 15V
Crss
Reverse Transfer Capacitance
–––
55
–––
ƒ = 1.0MHz
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
m
RDS(on)
Static Drain-to-Source On-Resistance
IDSS
Drain-to-Source Leakage Current
nA
ns
S
D
G


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