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NE3509M04-T2B Folha de dados(PDF) 3 Page - Renesas Technology Corp |
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3 / 12 page DATA SHEET Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Document No. PG10608EJ02V0DS (2nd edition) Date Published October 2008 NS Printed in Japan 2005, 2008 The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. FEATURES • Super low noise figure and high associated gain NF = 0.4 dB TYP., Ga = 17.5 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold (M04) package APPLICATIONS • Satellite radio (SDARS, DMB, etc.) antenna LNA • GPS antenna LNA • Low noise amplifier for microwave communication system ORDERING INFORMATION Part Number Order Number Package Quantity Marking Supplying Form NE3509M04 NE3509M04-A 50 pcs (Non reel) V80 NE3509M04-T2 NE3509M04-T2-A 3 kpcs/reel NE3509M04-T2B NE3509M04-T2B-A Flat-lead 4-pin thin- type super minimold (M04) (Pb-Free) 15 kpcs/reel • 8 mm wide embossed taping • Pin 1 (Source), Pin 2 (Drain) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE3509M04 ABSOLUTE MAXIMUM RATINGS (TA = +25 °C) Parameter Symbol Ratings Unit Drain to Source Voltage VDS 4.0 V Gate to Source Voltage VGS −3.0 V Drain Current ID IDSS mA Gate Current IG 200 μA Total Power Dissipation Ptot Note 150 mW Channel Temperature Tch +150 °C Storage Temperature Tstg −65 to +150 °C Note Mounted on 1.08 cm 2 × 1.0 mm (t) glass epoxy PCB <R> |
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