DATA SHEET

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE3509M04

L TO S BAND LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

Document No. PG10608EJ02V0DS (2nd edition)

Date Published October 2008 NS

Printed in Japan

2005, 2008

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

FEATURES

• Super low noise figure and high associated gain

• Flat-lead 4-pin thin-type super minimold (M04) package

APPLICATIONS

• Satellite radio (SDARS, DMB, etc.) antenna LNA

• GPS antenna LNA

• Low noise amplifier for microwave communication system

ORDERING INFORMATION

Part Number

Order Number

Package

Quantity

Marking

Supplying Form

NE3509M04

NE3509M04-A

50 pcs (Non reel)

V80

NE3509M04-T2

NE3509M04-T2-A

3 kpcs/reel

NE3509M04-T2B

NE3509M04-T2B-A

Flat-lead 4-pin thin-

type super minimold

(M04) (Pb-Free)

15 kpcs/reel

• 8 mm wide embossed taping

• Pin 1 (Source), Pin 2 (Drain) face

the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: NE3509M04

°C)

Parameter

Symbol

Ratings

Unit

Drain to Source Voltage

4.0

V

Gate to Source Voltage

−3.0

V

Drain Current

mA

Gate Current

200

Total Power Dissipation

Note

150

mW

Channel Temperature

+150

°C

Storage Temperature

−65 to +150

°C

Note Mounted on 1.08 cm

2

× 1.0 mm (t) glass epoxy PCB

<R>