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IRLU9343 Folha de dados(PDF) 2 Page - Kersemi Electronic Co., Ltd.

Nome de Peças IRLU9343
Descrição Electrónicos  Advanced Process Technology
Download  10 Pages
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Fabricante Electrônico  KERSEMI [Kersemi Electronic Co., Ltd.]
Página de início  http://www.kersemi.com
Logo KERSEMI - Kersemi Electronic Co., Ltd.

IRLU9343 Folha de dados(HTML) 2 Page - Kersemi Electronic Co., Ltd.

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IRLR/U9343 & IRLU9343-701
S
D
G
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
-55
–––
–––
V
∆ΒV
DSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
-52
–––
mV/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
93
105
m
–––
150
170
VGS(th)
Gate Threshold Voltage
-1.0
–––
–––
V
∆V
GS(th)/∆TJ
Gate Threshold Voltage Coefficient
–––
-3.7
–––
mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
-2.0
µA
–––
–––
-25
IGSS
Gate-to-Source Forward Leakage
–––
–––
-100
nA
Gate-to-Source Reverse Leakage
–––
–––
100
gfs
Forward Transconductance
5.3
–––
–––
S
Qg
Total Gate Charge
–––
31
47
Qgs
Gate-to-Source Charge
–––
7.1
–––
VGS = -10V
Qgd
Gate-to-Drain Charge
–––
8.5
–––
ID = -14A
Qgodr
Gate Charge Overdrive
–––
15
–––
See Fig. 6 and 19
td(on)
Turn-On Delay Time
–––
9.5
–––
tr
Rise Time
–––
24
–––
td(off)
Turn-Off Delay Time
–––
21
–––
ns
tf
Fall Time
–––
9.5
–––
Ciss
Input Capacitance
–––
660
–––
Coss
Output Capacitance
–––
160
–––
pF
Crss
Reverse Transfer Capacitance
–––
72
–––
Coss
Effective Output Capacitance
–––
280
–––
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
Avalanche Characteristics
Parameter
Units
EAS
Single Pulse Avalanche Energy
d
mJ
IAR
Avalanche Current
i
A
EAR
Repetitive Avalanche Energy
i
mJ
Diode Characteristics
Parameter
Min.
Typ. Max. Units
IS @ TC = 25°C Continuous Source Current
–––
–––
-20
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
-60
(Body Diode)
c
VSD
Diode Forward Voltage
–––
–––
-1.2
V
trr
Reverse Recovery Time
–––
57
86
ns
Qrr
Reverse Recovery Charge
–––
120
180
nC
VGS = -4.5V, ID = -2.7A
e
–––
120
See Fig. 14, 15, 17a, 17b
VDS = VGS, ID = -250µA
VDS = -55V, VGS = 0V
VDS = -55V, VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
ID = -14A
Typ.
Max.
ƒ = 1.0MHz,
See Fig.5
VGS = 0V, VDS = 0V to -44V
VGS = 0V
TJ = 25°C, IF = -14A
di/dt = 100A/µs
e
TJ = 25°C, IS = -14A, VGS = 0V
e
showing the
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -3.4A
e
MOSFET symbol
RG = 2.5Ω
VDS = -25V, ID = -14A
VDS = -44V
Conditions
and center of die contact
f
VDD = -28V, VGS = -10V
e
VDS = -50V
2014-8-16
2
www.kersemi.com


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