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IRFPS3810 Folha de dados(PDF) 2 Page - International Rectifier

Nome de Peças IRFPS3810
Descrição Electrónicos  Power MOSFET(Vdss=100V, Rds(on)=0.009ohm, Id=170A??
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRFPS3810 Folha de dados(HTML) 2 Page - International Rectifier

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Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
–––
VVGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.11
–––
V/°C
Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
––– 0.009
VGS = 10V, ID = 100A
„
VGS(th)
Gate Threshold Voltage
3.0
–––
5.0
V
VDS = 10V, ID = 250µA
gfs
Forward Transconductance
52
–––
–––
SVDS = 50V, ID = 100A
–––
–––
25
µA
VDS = 100V, VGS = 0V
–––
–––
250
VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 30V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -30V
Qg
Total Gate Charge
–––
260
390
ID = 100A
Qgs
Gate-to-Source Charge
–––
49
74
nC
VDS = 80V
Qgd
Gate-to-Drain ("Miller") Charge
–––
160
250
VGS = 10V
„
td(on)
Turn-On Delay Time
–––
24
–––
VDD = 50V
tr
Rise Time
–––
270
–––
ID = 100A
td(off)
Turn-Off Delay Time
–––
45
–––
RG = 1.03Ω
tf
Fall Time
–––
140
–––
VGS = 10V
„
Between lead,
–––
–––
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
6790 –––
VGS = 0V
Coss
Output Capacitance
–––
2470 –––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
990
–––
ƒ = 1.0MHz, See Fig. 5
Coss
Output Capacitance
––– 10740 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
1180 –––
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
…
–––
2210 –––
VGS = 0V, VDS = 0V to 80V
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LD
Internal Drain Inductance
LS
Internal Source Inductance
–––
–––
S
D
G
IGSS
ns
5.0
13
IDSS
Drain-to-Source Leakage Current
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
ƒ I
SD ≤ 100A, di/dt ≤ 350A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Notes:
‚ Starting TJ = 25°C, L = 0.27mH
RG = 25Ω, IAS = 100A. (See Figure 12)
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 100A, VGS = 0V
„
trr
Reverse Recovery Time
–––
220
330
ns
TJ = 25°C, IF = 100A
Qrr
Reverse RecoveryCharge
––– 1640 2460
nC
di/dt = 100A/µs
„
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
170
†
670
A
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
† Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 105A.


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