KDV275 datasheet(1/2 Pages) KEC

Nome de Peças	KDV275

Descrição Electrónicos	VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND)

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Fabricante Electrônico	KEC [KEC(Korea Electronics)]

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2003 1. 27

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SEMICONDUCTOR

TECHNICAL DATA

KDV275

Revision No : 0

VCO FOR UHF/VHF BAND.

FEATURES

High Capacitance Ratio : C1V/C4V =3.4(Min.)

Low Series Resistance

Excellent Linearity (CV Curve)

MAXIMUM RATING (Ta=25 )

USC

DIM

MILLIMETERS

A

B

C

D

E

F

G

H

J

K

2.50 0.1

1.25 0.05

0.90 0.05

0.30+0.06/-0.04

1.70 0.05

MIN 0.17

0.126 0.03

0~0.1

0.15 0.05

0.4 0.05

2 +4/-2

L

M4~6

I

1.0 MAX

M

I

C

J

G

D

2

1

B

1. ANODE

2. CATHODE

H

+

_

+

_

+

_

+

_

+

_

+

_

+

_

ELECTRICAL CHARACTERISTICS (Ta=25 )

VARIABLE CAPACITANCE DIODE

SILICON EPITAXIAL PLANAR DIODE

Grade

Type Name

Marking

C

CHARACTERISTIC

SYMBOL

RATING

UNIT

Reverse Voltage

VR

28

V

Junction Temperature

Tj

150

Storage Temperature Range

Tstg

-55 150

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Reverse Voltage

VR

IR=10 A

20

-

V

Reverse Current

IR

VR=16V

-

5

nA

Capacitance

C1V

VR=1V, f=1MHz

15.40

16.60

17.90

pF

C2V

VR=2V, f=1MHz

8.50

10.20

11.90

C4V

VR=4V, f=1MHz

3.60

4.30

5.05

Capacitance Ratio

K

C1V/C4V, f=1MHz

3.4

-

Series Resistance

rS

CT=8pF, f=470MHz

-

0.7

CLASSIFICATION OF CAPACITANCE GRADE

GRADE

CAPACITANCE (C2V)

UNIT

A

8.5 9.15

pF

B

9.05~9.85

pF

C

9.75 10.65

pF

D

10.55~11.35

pF

E

11.25~11.90

pF

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