2SC4783_15 datasheet(5/7 Pages) RENESAS

Nome de Peças	2SC4783

Descrição Electrónicos	NPN SILICON EPITAXIAL TRANSISTOR

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Data Sheet D15616EJ2V0DS

3

2SC4783

TYPICAL CHARACTERISTICS (TA = 25°C)

COLLECTOR CURRENT vs. COLLECTOR TO

EMITTER VOLTAGE

0

0.5

1.0

1.5

2.0

100

80

60

40

20

0.2

0.3

0.4

0.5

0.6

0.8

0.7

0.9

1.0

IB = 0.1 mA

VCE - Collector to Emitter Voltage - V

COLLECTOR AND BASE SATURATION VOLTAGE vs.

COLLECTOR CURRENT

5

2

1

10

100

20

50

1

0.2

0.5

0.1

0.05

0.02

0.01

IC = 10 IB

.

IC - Collector Current - mA

VCE(sat)

VBE(sat)

OUTPUT CAPACITANCE vs. REVERSE VOLTAGE

5

2

1

10

100

20

50

10

2

5

1

0.5

0.2

0.1

f = 1.0 MHz

VCB - Collector to Base Voltage - V

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

VBE - Base to Emitter Voltage - V

0.4

0.5

0.6

0.7

0.8

0.9

1.0

100

10

30

1

3

0.1

0.3

0.01

0.03

VCE = 6.0 V

COLLECTOR CURRENT vs. COLLECTOR TO

EMITTER VOLTAGE

20

10

30

40

50

10

8

6

4

2

0

IB = 5.0

µA

45

40

35

30

25

20

15

10

VCE - Collector to Emitter Voltage - V

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

TA - Ambient Temperature - ˚C

0

100

125

75

25

150

200

300

Free air

250

150

50

100

When

mounted

on

ceramic

substrate

of

3.0

cm

x 0.64

mm

2

Nº de peça semelhante - 2SC4783_15

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
NEC	2SC4783	37Kb / 4P	NPN SILICON EPITAXIAL TRANSISTOR
Renesas Technology Corp	2SC4783	256Kb / 7P	NPN SILICON EPITAXIAL TRANSISTOR 2001

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2SC4783 Folha de dados(PDF) 5 Page - Renesas Technology Corp

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Nº de peça semelhante - 2SC4783_15

Descrição semelhante - 2SC4783_15

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