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2SC4942 Folha de dados(PDF) 3 Page - Renesas Technology Corp |
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2SC4942 Folha de dados(HTML) 3 Page - Renesas Technology Corp |
3 / 8 page 1998 © Document No. D16152EJ1V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan SILICON TRANSISTORS 2SC4942 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING DATA SHEET 2002 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. The 2SC4942 is a transistor developed for high-speed high- voltage switching. This transistor is ideal for use in switching devices such as switching regulators and DC/DC converters. FEATURES • New package with dimensions in between those of small signal and power signal package • High voltage • Fast switching speed • Complementary transistor with the 2SA1871 QUALITY GRADES • Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. PACKAGE DRAWING (UNIT: mm) ABSOLUTE MAXIMUM RATINGS (Ta = 25 °°°°C) Parameter Symbol Conditions Ratings Unit Collector to base voltage VCBO 600 V Collector to emitter voltage VCEO 600 V Emitter to base voltage VEBO 7.0 V Collector current (DC) ID(DC) 1.0 A Collector current (pulse) ID(pulse) PW ≤ 10 ms, duty cycle ≤ 50 % 2.0 A Total power dissipation PT 7.5 cm 2 × 0.7 mm ceramic board mounted 2.0 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Electrode connection 1. Emitter 2. Collector 3. Base |
Nº de peça semelhante - 2SC4942_15 |
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Descrição semelhante - 2SC4942_15 |
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