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2SC4957 Folha de dados(PDF) 3 Page - Renesas Technology Corp |
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2SC4957 Folha de dados(HTML) 3 Page - Renesas Technology Corp |
3 / 9 page DATA SHEET Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. NPN SILICON RF TRANSISTOR 2SC4957 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD The mark shows major revised points. Document No. PU10520EJ01V0DS (1st edition) (Previous No. P10379EJ2V0DS00) Date Published September 2004 CP(K) Printed in Japan © NEC Compound Semiconductor Devices, Ltd. 1993, 2004 FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Reverse Transfer Capacitance Cre = 0.3 pF TYP. • 4-pin minimold Package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC4957 50 pcs (Non reel) 2SC4957-T1 3 kpcs/reel • 8 mm wide embossed taping • Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 °C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 9 V Collector to Emitter Voltage VCEO 6 V Emitter to Base Voltage VEBO 2 V Collector Current IC 30 mA Total Power Dissipation Ptot Note 180 mW Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C Note Free air |
Nº de peça semelhante - 2SC4957_15 |
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Descrição semelhante - 2SC4957_15 |
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