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IRF40B207 Folha de dados(PDF) 3 Page - International Rectifier |
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IRF40B207 Folha de dados(HTML) 3 Page - International Rectifier |
3 / 10 page 3 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback April 1, 2015 IRF40B207 D S G Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 170 ––– ––– S VDS = 10V, ID =57A Qg Total Gate Charge ––– 45 68 ID = 57A Qgs Gate-to-Source Charge ––– 12 ––– VDS = 20V Qgd Gate-to-Drain Charge ––– 15 ––– VGS = 10V Qsync Total Gate Charge Sync. (Qg– Qgd) ––– 30 ––– td(on) Turn-On Delay Time ––– 7.8 ––– ns VDD = 20V tr Rise Time ––– 35 ––– ID = 30A td(off) Turn-Off Delay Time ––– 25 ––– RG= 2.7 tf Fall Time ––– 19 ––– VGS = 10V Ciss Input Capacitance ––– 2110 ––– pF VGS = 0V Coss Output Capacitance ––– 340 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 220 ––– ƒ = 1.0MHz, See Fig.7 Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 400 ––– VGS = 0V, VDS = 0V to 32V Coss eff.(TR) Output Capacitance (Time Related) ––– 498 ––– VGS = 0V, VDS = 0V to 32V Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 95 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 380 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– 0.9 1.3 V TJ = 25°C,IS = 57A,VGS = 0V dv/dt Peak Diode Recovery dv/dt ––– 6.4 ––– V/ns TJ = 175°C,IS = 57A,VDS = 40V trr Reverse Recovery Time ––– 21 ––– ns TJ = 25°C VDD = 34V ––– 22 ––– TJ = 125°C IF = 57A, Qrr Reverse Recovery Charge ––– 13 ––– nC TJ = 25°C di/dt = 100A/µs ––– 15 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 1.1 ––– A TJ = 25°C nC |
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