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IRF3546M Folha de dados(PDF) 7 Page - International Rectifier

Nome de Peças IRF3546M
Descrição Electrónicos  60A Dual Integrated Power Block
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRF3546M Folha de dados(HTML) 7 Page - International Rectifier

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IRF3546
60A Dual Integrated Power Block
www.irf.com | © 2013 International Rectifier
May 29, 2013 | Final
7
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNIT
Synchronous MOSFETs (Q2 and Q4)
Drain-to-Source On-Resistance
RDS(ON)_4.5V_25°C
VGS=4.5V, ID=16A, TJ=25°C
1.8
2.2
mΩ
Drain-to-Source On-Resistance
RDS(ON)_10V_25°C
VGS=10V, ID=30A, TJ=25°C
1.35
1.8
mΩ
Drain-to-Source Breakdown Voltage
BVDSS
VGS=0V, ID=1mA, TJ=25°C
25
V
Breakdown Voltage Temperature
Coefficient
∆BV
DSS / ∆TJ
TJ=25°C -125°C, Note 1
0.02
V/°C
Drain-to-Source Leakage Current
IDSS
VDS=20V, VGS=0V, TJ=25°C
250
uA
Gate-to-Source Forward Leakage Current
IGSS
VGS=16V
100
nA
Gate-to-Source Reverse Leakage Current
IGSS
VGS=-16V
-100
nA
Gate Threshold Voltage
VGS(th)
VDS= VGS, ID=100uA
1.1
1.6
2.1
V
Gate Threshold Voltage Coefficient
∆V
GS(th)
VDS= VGS, ID=1mA
-5.4
mV/°C
Total Gate Charge
Qg
VDS= 13V, VGS,=4.5V, ID=30A,
Note 1
22
33
nC
Pre-Vth Gate-to-Source Charge
Qgs1
VDS= 13V, VGS=4.5V, ID=30A
5.1
nC
Post-Vth Gate-to-Source Charge
Qgs2
VDS= 13V, VGS=4.5V, ID=30A
3.1
nC
Gate-to-Drain Charge
Qgd
VDS= 13V, VGS=4.5V, ID=30A
6.0
nC
Gate Charge Overdrive
Qgodr
VDS= 13V, VGS=4.5V, ID=30A
6.7
nC
Switch Charge (Qgs2 +Qgd )
QSW
VDS= 13V, VGS=4.5V, ID=30A
9.1
nC
Output Charge
Qoss
VDS= 16V, VGS=0V
23
nC
Gate Resistance
Rg
0.4
Turn-On Delay Time
td(on)
VDD= 13V, VGS=4.5V, ID=16A,
RG=1.3 Ω
13
ns
Rise Time
tr
VDD= 13V, VGS=4.5V, ID=16A,
RG=1.3 Ω
15
ns
Turn-Off Delay Time
td
VDD= 13V, VGS=4.5V, ID=16A,
RG=1.3 Ω
16
ns
Fall Time
tf
VDD= 13V, VGS=4.5V, ID=16A,
RG=1.3 Ω
6.6
ns
Input Capacitance
Ciss
VGS= 0V, VDS=13V, f=1.0MHz
2880
pF
Output Capacitance
Coss
VGS= 0V, VDS=13V, f=1.0MHz
950
pF
Reverse Transfer Capacitance
Crss
VGS= 0V, VDS=13V, f=1.0MHz
180
pF
Diode Forward Voltage
VSD
VGS=0V, IS=30A, TJ=25°C
0.63
0.70
0.77
V
Diode Forward Voltage
VSD
VGS=0V, IS=13A, TJ=25°C
0.54
0.60
0.66
V
Reverse Recovery Time
trr
TJ=25°C, IF=30A, VDD=13V,
di/dt=200A/us, Note 1
23
35
ns
Reverse Recovery Charge
Qrr
TJ=25°C, IF=30A, VDD=13V,
di/dt=200A/us, Note 1
30
45
nC
Notes
1. Guaranteed by design but not tested in production
2. VIN=12V, VOUT=1.2V, ƒSW = 300kHz, L=210nH (0.29mΩ), VCC=6.8V, CIN=47uF x 4, COUT =470uF x3, 400LFM airflow, no heat sink, 25°C
ambient temperature, and 8-
layer PCB of 3.7” (L) x 2.6” (W). PWM controller loss and inductor loss are not included.
3. VIN=12V, VOUT=1.2V, ƒSW = 400kHz, L=150nH (0.29mΩ), VCC=6.8V, CIN=47uF x 4, COUT =470uF x3, no airflow, no heat sink, 25°C
ambient temperature, and 8-
layer PCB of 3.7” (L) x 2.6” (W). PWM controller loss and inductor loss are not included.


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