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BCW89 Folha de dados(PDF) 3 Page - NXP Semiconductors

Nome de Peças BCW89
Descrição Electrónicos  PNP general purpose transistor
Download  6 Pages
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Fabricante Electrônico  PHILIPS [NXP Semiconductors]
Página de início  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BCW89 Folha de dados(HTML) 3 Page - NXP Semiconductors

  BCW89_15 Datasheet HTML 1Page - NXP Semiconductors BCW89_15 Datasheet HTML 2Page - NXP Semiconductors BCW89_15 Datasheet HTML 3Page - NXP Semiconductors BCW89_15 Datasheet HTML 4Page - NXP Semiconductors BCW89_15 Datasheet HTML 5Page - NXP Semiconductors BCW89_15 Datasheet HTML 6Page - NXP Semiconductors  
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1999 Apr 15
3
NXP Semiconductors
Product data sheet
PNP general purpose transistor
BCW89
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = −20 V
−100 nA
IE = 0; VCB = −20 V; Tj = 100 °C
−10
μA
IEBO
emitter cut-off current
IC = 0; VEB = −5 V
−100 nA
hFE
DC current gain
IC = −10 μA; VCE = −5 V
90
IC = −2 mA; VCE = −5 V
120
260
VCEsat
collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA
−80
−300 mV
IC = −50 mA; IB = −2.5 mA
−150 −
mV
VBEsat
base-emitter saturation voltage
IC = −10 mA; IB = −0.5 mA
−720 −
mV
IC = −50 mA; IB = −2.5 mA
−810 −
mV
VBE
base-emitter voltage
IC = −2 mA; VCE = −5 V
−600 −
−750 mV
Cc
collector capacitance
IE = ie = 0; VCB = −10 V; f = 1 MHz
4.5
pF
fT
transition frequency
IC = −10 mA; VCE = −5 V; f = 100 MHz −
150
MHz
F
noise figure
IC = −200 μA; VCE = −5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
10
dB


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