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MJ15022 Folha de dados(PDF) 2 Page - ON Semiconductor

Nome de Peças MJ15022
Descrição Electrónicos  Silicon Power Transistors 16 AMPERES SILICON POWER TRANSISTORS
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Fabricante Electrônico  ONSEMI [ON Semiconductor]
Página de início  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MJ15022 Folha de dados(HTML) 2 Page - ON Semiconductor

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MJ15022 (NPN), MJ15024 (NPN)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 100 mAdc, IB = 0)
MJ15022
MJ15024
VCEO(sus)
200
250
Collector Cutoff Current
(VCE = 200 Vdc, VBE(off) = 1.5 Vdc)
MJ15022
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
MJ15024
ICEX
250
250
mAdc
Collector Cutoff Current
(VCE = 150 Vdc, IB = 0)
MJ15022
(VCE = 200 vdc, IB = 0)
MJ15024
ICEO
500
500
mAdc
Emitter Cutoff Current
(VCE = 5 Vdc, IB = 0)
IEBO
500
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 0.5 s (non−repetitive))
(VCE = 80 Vdc, t = 0.5 s (non−repetitive))
IS/b
5
2
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 4 Vdc)
(IC = 16 Adc, VCE = 4 Vdc)
hFE
15
5
60
Collector−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
VCE(sat)
1.4
4.0
Vdc
Base−Emitter On Voltage
(IC = 8 Adc, VCE = 4 Vdc)
VBE(on)
2.2
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
fT
4
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
Cob
500
pF
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.
100
Figure 1. Active−Region Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1
0.2
0.5
10
1 k
20
TC = 25°C
50
250
0.1
0.2
1.0
5.0
50
500
100
10
20
BONDING WIRE LIMITED
THERMAL LIMITATION
(SINGLE PULSE)
SECOND BREAKDOWN
LIMITED
There are two limitations on the powerhandling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values Ion than the limitations imposed by
second breakdown.


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