© Semiconductor Components Industries, LLC, 2013

September, 2013 − Rev. 16

1

Publication Order Number:

MJ15003/D

MJ15003 (NPN),

MJ15004 (PNP)

Complementary Silicon

Power Transistors

The MJ15003 and MJ15004 are power transistors designed for high

power audio, disk head positioners and other linear applications.

Features

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

140

Vdc

Collector−Base Voltage

140

Vdc

Emitter−Base Voltage

5

Vdc

Collector Current − Continuous

20

Adc

Base Current − Continuous

5

Adc

Emitter Current − Continuous

25

Adc

Derate above 25°C

250

1.43

W

W/°C

Operating and Storage Junction

Temperature Range

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

0.70

°C/W

Maximum Lead Temperature for Soldering

Purposes 1/16″ from Case for v 10 secs

265

°C

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

20 AMPERE

POWER TRANSISTORS

COMPLEMENTARY SILICON

140 VOLTS, 250 WATTS

Device

Package

Shipping

ORDERING INFORMATION

TO−204AA

(Pb−Free)

MJ15004G

MJ15003G

TO−204AA

(Pb−Free)

100 Units/Tray

100 Units/Tray

TO−204AA (TO−3)

CASE 1−07

STYLE 1

MARKING DIAGRAM

MJ1500x = Device Code

x = 3 or 4

G= Pb−Free Package

A

= Location Code

YY

= Year

WW

= Work Week

MEX

= Country of Orgin

MJ1500xG

AYYWW

MEX

1

2

3

SCHEMATIC

1

BASE

EMITTER 2

CASE 3

1

BASE

EMITTER 2

CASE 3

PNP

NPN