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IRFPS3815PBF Folha de dados(PDF) 1 Page - International Rectifier |
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IRFPS3815PBF Folha de dados(HTML) 1 Page - International Rectifier |
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1 / 8 page  IRFPS3815PbF HEXFET® Power MOSFET The HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. S D G VDSS = 150V RDS(on) = 0.015Ω ID = 105A Description 09/13/04 www.irf.com 1 l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Super-247™ Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 105 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 74 A IDM Pulsed Drain Current 390 PD @TC = 25°C Power Dissipation 441 W Linear Derating Factor 2.9 W/°C VGS Gate-to-Source Voltage ± 30 V EAS Single Pulse Avalanche Energy 1610 mJ IAR Avalanche Current 58 A EAR Repetitive Avalanche Energy 38 mJ dv/dt Peak Diode Recovery dv/dt 3.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Absolute Maximum Ratings Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.34 RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W RθJA Junction-to-Ambient ––– 40 Thermal Resistance PD - 95896 |
Nº de peça semelhante - IRFPS3815PBF |
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Descrição semelhante - IRFPS3815PBF |
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