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1PS76SB10_15 Folha de dados(PDF) 1 Page - NXP Semiconductors |
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1 / 8 page 1PS76SB10 Schottky barrier single diode 17 December 2012 Product data sheet Scan or click this QR code to view the latest information for this product 1. General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a very small SOD323 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low forward voltage • Low capacitance • AEC-Q101 qualified 3. Applications • Ultra high-speed switching • Line termination • Voltage clamping • Reverse polarity protection 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit IF forward current - - 200 mA VR reverse voltage - - 30 V VF forward voltage IF = 10 mA; pulsed; tp = 300 µs; δ = 0.02 ; Tamb = 25 °C - - 400 mV 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode[1] 2 A anode 2 1 SOD323 aaa-003679 K A [1] The marking bar indicates the cathode. |
Nº de peça semelhante - 1PS76SB10_15_15 |
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Descrição semelhante - 1PS76SB10_15_15 |
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