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IRLR3114ZPBF Folha de dados(PDF) 1 Page - International Rectifier |
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IRLR3114ZPBF Folha de dados(HTML) 1 Page - International Rectifier |
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1 / 11 page  10/01/10 www.irf.com 1 HEXFET® is a registered trademark of International Rectifier. Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitiveavalancherating. Thesefeaturescombine to make this design an extremely efficient and reliable device for use in a wide variety of applications. Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Logic Level IRLR3114ZPbF IRLU3114ZPbF HEXFET® Power MOSFET VDSS = 40V RDS(on) = 4.9mΩ S D G D-Pak IRLR3114ZPbF I-Pak IRLU3114ZPbF Absolute Maximum Ratings Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS (Thermally limited) Single Pulse Avalanche Energyd mJ EAS (Tested ) Single Pulse Avalanche Energy Tested Value h IAR Avalanche Current à A EAR Repetitive Avalanche Energy g mJ TJ Operating Junction and TSTG Storage Temperature Range °C Reflow Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case j ––– 1.05 RθJA Junction-to-Ambient (PCB mount) ij ––– 40 °C/W RθJA Junction-to-Ambient j ––– 110 260 130 See Fig.12a, 12b, 15, 16 140 0.95 ±16 Max. 130 89 500 42 -55 to + 175 300 10 lbf yin (1.1Nym) PD - 97284A |
Nº de peça semelhante - IRLR3114ZPBF_15 |
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Descrição semelhante - IRLR3114ZPBF_15 |
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