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IRLS4030PBF Folha de dados(PDF) 1 Page - International Rectifier

Nome de Peças IRLS4030PBF
Descrição Electrónicos  High Efficiency Synchronous Rectification in SMPS
Download  10 Pages
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRLS4030PBF Folha de dados(HTML) 1 Page - International Rectifier

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02/12/09
www.irf.com
1
HEXFET® Power MOSFET
Benefits
l Optimized for Logic Level Drive
l Very Low RDS(ON) at 4.5V VGS
l Superior R*Q at 4.5V VGS
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
Applications
l DC Motor Drive
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
S
D
G
PD - 97370
IRLS4030PbF
IRLSL4030PbF
GD
S
Gate
Drain
Source
VDSS
100V
RDS(on) typ.
3.4m
max.
4.3mΩ
ID
180A
D2Pak
IRLS4030PbF
TO-262
IRLSL4030bF
G
D
S
GD
S
Absolute Maximum Ratings
Symbol
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
c
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
e
V/ns
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy
d
mJ
IAR
Avalanche Current
c
A
EAR
Repetitive Avalanche Energy
f
mJ
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
jk
–––
0.40
°C/W
RθJA
Junction-to-Ambient (PCB Mount)
ij
–––
40
300
Max.
180
130
730
305
See Fig. 14, 15, 22a, 22b
370
21
-55 to + 175
± 16
2.5


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