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IRLZ44NPBF Folha de dados(PDF) 2 Page - International Rectifier

Nome de Peças IRLZ44NPBF
Descrição Electrónicos  Advnaced Process Technology
Download  9 Pages
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRLZ44NPBF Folha de dados(HTML) 2 Page - International Rectifier

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IRLZ44NPbF
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55
––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.070 –––
V/°C Reference to 25°C, ID = 1mA
–––
––– 0.022
VGS = 10V, ID = 25A „
–––
––– 0.025
VGS = 5.0V, ID = 25A „
–––
––– 0.035
VGS = 4.0V, ID = 21A „
VGS(th)
Gate Threshold Voltage
1.0
––– 2.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
21
––– –––
S
VDS = 25V, ID = 25A
–––
–––
25
VDS = 55V, VGS = 0V
–––
––– 250
VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
––– 100
VGS = 16V
Gate-to-Source Reverse Leakage
–––
––– -100
VGS = -16V
Qg
Total Gate Charge
–––
–––
48
ID = 25A
Qgs
Gate-to-Source Charge
–––
––– 8.6
nC
VDS = 44V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
25
VGS = 5.0V, See Fig. 6 and 13 „
td(on)
Turn-On Delay Time
–––
11
–––
VDD = 28V
tr
Rise Time
–––
84
–––
ID = 25A
td(off)
Turn-Off Delay Time
–––
26
–––
RG = 3.4Ω, VGS = 5.0V
tf
Fall Time
–––
15
–––
RD = 1.1Ω, See Fig. 10 „
Between lead,
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
––– 1700 –––
VGS = 0V
Coss
Output Capacitance
–––
400 –––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
150 –––
ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
S
D
G
IDSS
Drain-to-Source Leakage Current
IGSS
LS
Internal Source Inductance
––– 7.5
–––
LD
Internal Drain Inductance
––– 4.5
–––
µA
nA
ns
nH
RDS(on)
Static Drain-to-Source On-Resistance
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode) 
p-n junction diode.
VSD
Diode Forward Voltage
––– ––– 1.3
V
TJ = 25°C, IS = 25A, VGS = 0V „
trr
Reverse Recovery Time
–––
80
120
ns
TJ = 25°C, IF = 25A
Qrr
Reverse RecoveryCharge
––– 210 320
nC
di/dt = 100A/µs „
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
A
––– ––– 160
––– –––
47
S
D
G
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ƒ ISD ≤ 25A, di/dt ≤ 270A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
‚ VDD = 25V, starting TJ = 25°C, L = 470µH
RG = 25Ω, IAS = 25A. (See Figure 12)
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
Notes:


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