LM3151, LM3152, LM3153

SNVS562G – SEPTEMBER 2008 – REVISED MARCH 2011

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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ABSOLUTE MAXIMUM RATINGS

(1) (2)

VIN to GND

-0.3V to 47V

SW to GND

-3V to 47V

BST to SW

-0.3V to 7V

BST to GND

-0.3V to 52V

All Other Inputs to GND

-0.3V to 7V

2kV

Storage Temperature Range

-65°C to +150°C

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for

which the device is intended to be functional, but does not ensure specific performance limits. For ensured specifications and conditions,

see the Electrical Characteristics.

(2)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and

specifications.

(3)

The human body model is a 100 pF capacitor discharged through a 1.5 k

Ω resistor into each pin. Test Method is per JESD-22-A114.

OPERATING RATINGS

(1)

6V to 42V

−40°C to + 125°C

EN

0V to 5V

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for

which the device is intended to be functional, but does not ensure specific performance limits. For ensured specifications and conditions,

see the Electrical Characteristics.

ELECTRICAL CHARACTERISTICS

to +125°C. Minimum and Maximum limits are specified through test, design, or statistical correlation. Typical values represent

Symbol

Parameter

Conditions

Min

Typ

Max

Units

Start-Up Regulator, VCC

5.65

5.95

6.25

V

40

mV

330

(1)

65

100

mA

VCC Under-voltage Lockout threshold

4.75

5.1

5.40

VCC Increasing

V

(UVLO)

VCC Decreasing

475

mV

3

µs

Input Operating Current

No Switching

3.6

5.2

mA

32

55

µA

GATE Drive

Boost Pin Leakage

2

nA

HG Drive Pull–Up On-Resistance

5

Ω

HG Drive Pull–Down On-Resistance

3.4

Ω

LG Drive Pull–Up On-Resistance

3.4

Ω

LG Drive Pull–Down On-Resistance

2

Ω

(1)

VCC provides self bias for the internal gate drive and control circuits. Device thermal limitations limit external loading.

4

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