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3N80G-TF2-T Folha de dados(PDF) 7 Page - Unisonic Technologies |
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3N80G-TF2-T Folha de dados(HTML) 7 Page - Unisonic Technologies |
7 / 8 page 3N80 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 7 of 8 www.unisonic.com.tw QW-R502-283.I TYPICAL CHARACTERISTICS 200 0 0 1 Drain Current vs. Source to Drain Voltage Source to Drain Voltage,VSD (mV) 800 400 600 3 4 3 1200 0 0 400 800 1000 Drain-Source On-State Resistance Characteristics Drain to Source Voltage, VDS (V) 200 2 1 600 4 VGS=10V, ID=1.25A 1000 2 1 0 0 50 Drain Current vs. Gate Threshold Voltage Gate Threshold Voltage,VTH (V) 250 100 150 200 300 Drain Current vs. Drain-Source Breakdown Voltage 0 0 50 Drain-Source Breakdown Voltage,BVDSS(V) 600 250 200 100 150 200 300 400 800 350 400 24 3 1000 |
Nº de peça semelhante - 3N80G-TF2-T |
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Descrição semelhante - 3N80G-TF2-T |
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