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3N90G-TM3-T Folha de dados(PDF) 2 Page - Unisonic Technologies |
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3N90G-TM3-T Folha de dados(HTML) 2 Page - Unisonic Technologies |
2 / 5 page 3N90-E Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 5 www.unisonic.com.tw QW-R205-007.C ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (VGS=0V) VDSS 900 V Drain-Gate Voltage (RG=20kΩ) VDGR 900 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 3 A Continuous Drain Current ID 3 A Pulsed Drain Current IDM 10 A Single Pulse Avalanche Energy (Note 3) EAS 100 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation PD 45 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. L = 22.2mH, IAS = 3A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≦3A, di/dt≦200A/μs, VDD≦BVDSS, TJ≦TJ(MAX). THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction to Ambient θJA 110 °C/W Junction to Case θJC 2.77 °C/W ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 900 V Drain-Source Leakage Current IDSS VDS=900V, VGS=0V 1 μA Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V ±10 μA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA 3.0 4.1 5.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=1.5A 5.0 6.2 Ω Forward Transconductance (Note) gFS VDS=15V, ID=1.5A 2.1 S DYNAMIC CHARACTERISTICS Input Capacitance CISS 430 pF Output Capacitance COSS 47 pF Reverse Transfer Capacitance CRSS VDS=25V, VGS=0V, f=1MHz 7.7 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 45 ns Turn-On Rise Time tR 56 ns Turn-Off Delay Time tD(OFF) 80 ns Turn-Off Fall Time tF VDS=30V, ID=0.5A, RG=25Ω 52 ns Total Gate Charge QG 19.25 nC Gate-Source Charge QGS 5.3 nC Gate-Drain Charge QGD VDD=50V, ID=1.3A, VGS=10V 5 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage(Note) VSD ISD=3A ,VGS=0V 1.6 V Source-Drain Current ISD 3 A Source-Drain Current (Pulsed) ISDM 12 A Note: Pulse width=300μs, Duty cycle≦1.5%. |
Nº de peça semelhante - 3N90G-TM3-T |
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Descrição semelhante - 3N90G-TM3-T |
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