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SM5010AH3S Folha de dados(PDF) 7 Page - Nippon Precision Circuits Inc |
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SM5010AH3S Folha de dados(HTML) 7 Page - Nippon Precision Circuits Inc |
7 / 14 page SM5010 series NIPPON PRECISION CIRCUITS—7 5010CL × series 3 V operation: VDD = 2.7 to 3.6 V, VSS = 0 V, Ta = −20 to 80 °C unless otherwise noted. 5 V operation: VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = −40 to 85 °C unless otherwise noted. P arameter Symbol Condition Rating Unit min typ m a x HIGH-level output voltage V OH Q: Measurement cct 1, V DD = 2.7 V, IOH = 8 m A 2.2 2.4 – V L O W -level output voltage V OL Q: Measurement cct 2, V DD = 2.7 V, IOL = 8 m A – 0.3 0.4 V Output leakage current IZ Q: Measurement cct 2, I N H = L O W , V DD = 3.6 V, VOH = V DD –– 1 0 µA Q: Measurement cct 2, I N H = L O W , V DD = 3.6 V, VOL = V SS –– 1 0 HIGH-level input voltage V IH INH 0.7VDD V L O W -level input voltage V IL INH 0.3VDD V Current consumption IDD Measurement cct 3, load cct 2, INH = open, CL = 15 pF, f = 30 M H z 5010CL1 TBD mA 5010CL2 5010CL3 5010CL4 INH pull-up resistance R UP1 Measurement cct 4 – 100 – k Ω R UP2 TBD M Ω Feedback resistance R f Measurement cct 5 – 2 0 0 – k Ω Built-in capacitance C G Design value, determined by the internal wafer pattern TBD pF C D pF P arameter Symbol Condition Rating Unit min typ m a x HIGH-level output voltage V OH Q: Measurement cct 1, V DD = 4.5 V, IOH = 16 m A 4.0 4.2 – V L O W -level output voltage V OL Q: Measurement cct 2, V DD = 4.5 V, IOL = 16 m A – 0.3 0.4 V Output leakage current IZ Q: Measurement cct 2, I N H = L O W , V DD = 5.5 V, VOH = V DD –– 1 0 µA Q: Measurement cct 2, I N H = L O W , V DD = 5.5 V, VOL = V SS –– 1 0 HIGH-level input voltage V IH INH 0.7VDD V L O W -level input voltage V IL INH 0.3VDD V Current consumption IDD Measurement cct 3, load cct 2, INH = open, CL = 50 pF, f = 30 M H z 5010CL1 TBD mA 5010CL2 5010CL3 5010CL4 INH pull-up resistance R UP1 Measurement cct 4 – 100 – k Ω R UP2 TBD M Ω Feedback resistance R f Measurement cct 5 – 2 0 0 – k Ω Built-in capacitance C G Design value, determined by the internal wafer pattern TBD pF C D pF |
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