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74LVC126ADR2G Folha de dados(PDF) 5 Page - ON Semiconductor

Nome de Peças 74LVC126ADR2G
Descrição Electrónicos  Low-Voltage CMOS Quad 2-Input NAND Gate
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Fabricante Electrônico  ONSEMI [ON Semiconductor]
Página de início  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

74LVC126ADR2G Folha de dados(HTML) 5 Page - ON Semiconductor

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AC ELECTRICAL CHARACTERISTICS (tR = tF = 2.5 ns)
Symbol
Parameter
Conditions
−40
5C to +855C
−40
5C to +1255C
Unit
Min
Typ1
Max
Min
Typ1
Max
tpd
Propagation Delay (Note 5)
Dn to On
VCC = 1.2 V
12.0
ns
VCC = 1.65 V to 1.95 V
1.5
5.4
11.0
1.5
12.8
VCC = 2.3 V to 2.7 V
1.0
2.9
5.7
1.0
6.7
VCC = 2.7 V
1.5
2.8
5.5
1.5
7.0
VCC = 3.0 V to 3.6 V
1.0
2.5
4.8
1.0
6.0
ten
Enable Time (Note 6)
OEn to On
VCC = 1.2 V
16.0
ns
VCC = 1.65 V to 1.95 V
1.0
5.0
12.2
1.0
14.2
VCC = 2.3 V to 2.7 V
0.5
2.9
6.8
0.5
7.9
VCC = 2.7 V
1.5
3.1
6.6
1.5
8.5
VCC = 3.0 V to 3.6 V
1.0
2.3
5.4
1.0
7.0
tdis
Disable Time (Note 7)
OEn to On
VCC = 1.2 V
7.0
ns
VCC = 1.65 V to 1.95 V
2.2
4.6
7.5
2.2
8.7
VCC = 2.3 V to 2.7 V
0.5
2.6
4.2
0.5
5.0
VCC = 2.7 V
1.5
3.1
5.0
1.5
6.5
VCC = 3.0 V to 3.6 V
1.0
3.2
4.6
1.0
6.0
tsk(0)
Output Skew Time (Note 8)
1
1.5
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Typical values are measured at TA = 25
°C and VCC = 3.3 V, unless stated otherwise.
5. tpd is the same as tPLH and tPHL.
6. ten is the same as tPZL and tPZH.
7. tdis is the same as tPLZ and tPHZ.
8. Skew between any two outputs of the same package switching in the same direction. This parameter is guaranteed by design.
DYNAMIC SWITCHING CHARACTERISTICS
Symbol
Characteristic
Condition
TA = +25°C
Unit
Min
Typ
Max
VOLP
Dynamic LOW Peak Voltage (Note 9)
VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V
VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V
0.8
0.6
V
VOLV
Dynamic LOW Valley Voltage (Note 9)
VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V
VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V
−0.8
−0.6
V
9. Number of outputs defined as “n”. Measured with “n−1” outputs switching from HIGH−to−LOW or LOW−to−HIGH. The remaining output is
measured in the LOW state.
CAPACITIVE CHARACTERISTICS
Symbol
Parameter
Condition
Typical
Unit
CIN
Input Capacitance
VCC = 3.3 V, VI = 0 V or VCC
4.0
pF
COUT
Output Capacitance
VCC = 3.3 V, VI = 0 V or VCC
5.0
pF
CPD
Power Dissipation Capacitance
(Note 10)
Per input; VI = GND or VCC
pF
VCC = 1.65 V to 1.95 V
6.0
VCC = 2.3 V to 2.7 V
9.4
VCC = 3.0 V to 3.6 V
12.4
10. CPD is used to determine the dynamic power dissipation (PD in mW).
PD = CPD x VCC2 x fi x N + S (CL x VCC2 x fo) where:
fi = input frequency in MHz; fo = output frequency in MHz
CL = output load capacitance in pF VCC = supply voltage in Volts
N = number of outputs switching
S(CL x VCC2 x fo) = sum of the outputs.


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