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74LVC126ADR2G Folha de dados(PDF) 5 Page - ON Semiconductor |
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74LVC126ADR2G Folha de dados(HTML) 5 Page - ON Semiconductor |
5 / 9 page 74LVC126A www.onsemi.com 5 AC ELECTRICAL CHARACTERISTICS (tR = tF = 2.5 ns) Symbol Parameter Conditions −40 5C to +855C −40 5C to +1255C Unit Min Typ1 Max Min Typ1 Max tpd Propagation Delay (Note 5) Dn to On VCC = 1.2 V − 12.0 − − − − ns VCC = 1.65 V to 1.95 V 1.5 5.4 11.0 1.5 − 12.8 VCC = 2.3 V to 2.7 V 1.0 2.9 5.7 1.0 − 6.7 VCC = 2.7 V 1.5 2.8 5.5 1.5 − 7.0 VCC = 3.0 V to 3.6 V 1.0 2.5 4.8 1.0 − 6.0 ten Enable Time (Note 6) OEn to On VCC = 1.2 V − 16.0 − − − − ns VCC = 1.65 V to 1.95 V 1.0 5.0 12.2 1.0 − 14.2 VCC = 2.3 V to 2.7 V 0.5 2.9 6.8 0.5 − 7.9 VCC = 2.7 V 1.5 3.1 6.6 1.5 − 8.5 VCC = 3.0 V to 3.6 V 1.0 2.3 5.4 1.0 − 7.0 tdis Disable Time (Note 7) OEn to On VCC = 1.2 V − 7.0 − − − − ns VCC = 1.65 V to 1.95 V 2.2 4.6 7.5 2.2 − 8.7 VCC = 2.3 V to 2.7 V 0.5 2.6 4.2 0.5 − 5.0 VCC = 2.7 V 1.5 3.1 5.0 1.5 − 6.5 VCC = 3.0 V to 3.6 V 1.0 3.2 4.6 1.0 − 6.0 tsk(0) Output Skew Time (Note 8) − − 1 − − 1.5 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Typical values are measured at TA = 25 °C and VCC = 3.3 V, unless stated otherwise. 5. tpd is the same as tPLH and tPHL. 6. ten is the same as tPZL and tPZH. 7. tdis is the same as tPLZ and tPHZ. 8. Skew between any two outputs of the same package switching in the same direction. This parameter is guaranteed by design. DYNAMIC SWITCHING CHARACTERISTICS Symbol Characteristic Condition TA = +25°C Unit Min Typ Max VOLP Dynamic LOW Peak Voltage (Note 9) VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V 0.8 0.6 V VOLV Dynamic LOW Valley Voltage (Note 9) VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V −0.8 −0.6 V 9. Number of outputs defined as “n”. Measured with “n−1” outputs switching from HIGH−to−LOW or LOW−to−HIGH. The remaining output is measured in the LOW state. CAPACITIVE CHARACTERISTICS Symbol Parameter Condition Typical Unit CIN Input Capacitance VCC = 3.3 V, VI = 0 V or VCC 4.0 pF COUT Output Capacitance VCC = 3.3 V, VI = 0 V or VCC 5.0 pF CPD Power Dissipation Capacitance (Note 10) Per input; VI = GND or VCC pF VCC = 1.65 V to 1.95 V 6.0 VCC = 2.3 V to 2.7 V 9.4 VCC = 3.0 V to 3.6 V 12.4 10. CPD is used to determine the dynamic power dissipation (PD in mW). PD = CPD x VCC2 x fi x N + S (CL x VCC2 x fo) where: fi = input frequency in MHz; fo = output frequency in MHz CL = output load capacitance in pF VCC = supply voltage in Volts N = number of outputs switching S(CL x VCC2 x fo) = sum of the outputs. |
Nº de peça semelhante - 74LVC126ADR2G |
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Descrição semelhante - 74LVC126ADR2G |
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