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ACE1715B Folha de dados(PDF) 2 Page - ACE Technology Co., LTD.

Nome de Peças ACE1715B
Descrição Electrónicos  N-Channel Enhancement Mode MOSFET
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Fabricante Electrônico  ACE [ACE Technology Co., LTD.]
Página de início  http://www.ace-ele.com
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ACE1715B Folha de dados(HTML) 2 Page - ACE Technology Co., LTD.

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ACE1715B
N-Channel Enhancement Mode MOSFET
VER 1.1
2
Electrical Characteristics TA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS=0V, ID=250uA
150
V
Zero Gate Voltage Drain Current
IDSS
VDS=150V, VGS=0V
1
uA
Gate Threshold Voltage
IGS(TH)
VGS= VDS, ID=250uA
1.5
2.0
2.5
V
Gate Leakage Current
IGSS
VGS=±20V, VDS=0V
±100
nA
Drain-Source On-state Resistance
RDS(ON)
VGS=10V, ID=1.5A
400
450
m
Ω
Forward Transconductance
gFS
VDS=15V, ID=1.5A
5
S
Diode Forward Voltage
VSD
ISD=2A, VGS=0V
1.2
V
Maximum Body-Diode Continuous
Current
IS
2
A
Switching
Total Gate Charge
Qg
VGS=10V,VDS=75V, ID=1.5A
8
nC
Gate-Source Charge
Qgs
1.4
Gate-Drain Charge
Qgd
2.1
Turn-On Delay Time
td(on)
VGS=10V ,VDS=75V,
RL=75Ω,RGEN=6Ω
8
ns
Turn-On Rise Time
tf
10
Turn-Off Delay Time
td(off)
20
Turn-Off Fall Time
tf
15
Dynamic
Input Capacitance
Ciss
VGS=0V ,VDS=75V,
F=1MHz
235
pF
Output Capacitance
Coss
36
Reverse Transfer Capacitance
Crss
20
Note:
A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.


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