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MTB032P06AV8 Folha de dados(PDF) 1 Page - Cystech Electonics Corp. |
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MTB032P06AV8 Folha de dados(HTML) 1 Page - Cystech Electonics Corp. |
1 / 9 page CYStech Electronics Corp. Spec. No. : C924V8 Issued Date : 2015.10.26 Revised Date : Page No. : 1/9 MTB032P06AV8 CYStek Product Specification P-Channel Enhancement Mode Power MOSFET MTB032P06AV8 BVDSS -60V -25A ID@VGS=-10V, TC=25°C RDSON@VGS=10V, ID=-6A 30mΩ(typ) RDSON@VGS=-4.5V, ID=-4A 35mΩ(typ) Description The MTB032P06AV8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package Equivalent Circuit Outline Ordering Information Device Package Shipping MTB032P06AV8-0-T6-G DFN3×3 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel MTB032P06AV8 DFN3×3 G:Gate S:Source D:Drain Pin 1 Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name |
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Descrição semelhante - MTB032P06AV8 |
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