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MMSF4N01HD Folha de dados(PDF) 2 Page - ON Semiconductor |
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MMSF4N01HD Folha de dados(HTML) 2 Page - ON Semiconductor |
2 / 12 page MMSF4N01HD http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) V(BR)DSS 20 − − 2.0 − − Vdc mV/ °C Zero Gate Voltage Drain Current (VDS = 12 Vdc, VGS = 0 Vdc) (VDS = 12 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS − − − − 1.0 10 µAdc Gate−Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0) IGSS − − 100 nAdc ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (VDS = VGS, ID = 0.25 mAdc) Temperature Coefficient (Negative) VGS(th) 0.6 − 0.8 2.8 1.1 − Vdc mV/ °C Static Drain−Source On−Resistance (VGS = 4.5 Vdc, ID = 4.0 Adc) (VGS = 2.7 Vdc, ID = 2.0 Adc) RDS(on) − − 0.035 0.043 0.045 0.055 Ohm Forward Transconductance (VDS = 2.5 Vdc, ID = 2.0 Adc) gFS 3.0 6.0 − mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 10 Vd V 0Vd Ciss − 425 595 pF Output Capacitance (VDS = 10 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Coss − 270 378 Transfer Capacitance f = 1.0 MHz) Crss − 115 230 SWITCHING CHARACTERISTICS (Note 2) Turn−On Delay Time td(on) − 13 26 ns Rise Time (VDD = 6.0 Vdc, ID = 4.0 Adc, VGS =27Vdc tr − 60 120 Turn−Off Delay Time VGS = 2.7 Vdc, RG = 2.3 Ω) td(off) − 20 40 Fall Time RG 2.3 Ω) tf − 29 58 Turn−On Delay Time td(on) − 10 20 Rise Time (VDD = 6.0 Vdc, ID = 4.0 Adc, VGS =45Vdc tr − 42 84 Turn−Off Delay Time VGS = 4.5 Vdc, RG = 2.3 Ω) td(off) − 24 48 Fall Time RG 2.3 Ω) tf − 28 56 Gate Charge SFi 8 QT − 9.2 13 nC See Figure 8 (VDS = 10 Vdc, ID = 4.0 Adc, Q1 − 1.3 − (VDS 10 Vdc, ID 4.0 Adc, VGS = 4.5 Vdc) Q2 − 3.5 − Q3 − 3.0 − SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 4.0 Adc, VGS = 0 Vdc) (IS = 4.0 Adc, VGS = 0 Vdc, TJ = 125°C) VSD − − 0.95 0.78 1.1 − Vdc Reverse Recovery Time trr − 38 − ns (IS = 4.0 Adc, VGS = 0 Vdc, ta − 17 − (IS 4.0 Adc, VGS 0 Vdc, dIS/dt = 100 A/µs) tb − 22 − Reverse Recovery Stored Charge QRR − 0.028 − µC 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. |
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