Os motores de busca de Datasheet de Componentes eletrônicos
  Portuguese  ▼
ALLDATASHEETPT.COM

X  

MMSF5N02HDR2 Folha de dados(PDF) 5 Page - ON Semiconductor

Nome de Peças MMSF5N02HDR2
Descrição Electrónicos  N-Channel SO-8 Power MOSFET
Download  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrônico  ONSEMI [ON Semiconductor]
Página de início  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MMSF5N02HDR2 Folha de dados(HTML) 5 Page - ON Semiconductor

  MMSF5N02HDR2 Datasheet HTML 1Page - ON Semiconductor MMSF5N02HDR2 Datasheet HTML 2Page - ON Semiconductor MMSF5N02HDR2 Datasheet HTML 3Page - ON Semiconductor MMSF5N02HDR2 Datasheet HTML 4Page - ON Semiconductor MMSF5N02HDR2 Datasheet HTML 5Page - ON Semiconductor MMSF5N02HDR2 Datasheet HTML 6Page - ON Semiconductor MMSF5N02HDR2 Datasheet HTML 7Page - ON Semiconductor MMSF5N02HDR2 Datasheet HTML 8Page - ON Semiconductor MMSF5N02HDR2 Datasheet HTML 9Page - ON Semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 5 / 10 page
background image
MMSF5N02HD
http://onsemi.com
5
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
RG, GATE RESISTANCE (OHMS)
1
10
100
1000
100
10
1
VDD = 10 V
ID = 5 A
VGS = 10 V
TJ = 25°C
tr
tf
td(off)
td(on)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
24
20
16
12
8
4
0
0
10
6
2
0
QT, TOTAL CHARGE (nC)
12
8
4
48
32
ID = 5 A
TJ = 25°C
12
VDS
VGS
QT
Q2
Q3
Q1
16
20
24
28
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
The switching characteristics of a MOSFET body diode
are very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse
recovery characteristics which play a major role in
determining switching losses, radiated noise, EMI and RFI.
System switching losses are largely due to the nature of
the body diode itself. The body diode is a minority carrier
device, therefore it has a finite reverse recovery time, trr, due
to the storage of minority carrier charge, QRR, as shown in
the typical reverse recovery wave form of Figure 15. It is this
stored charge that, when cleared from the diode, passes
through a potential and defines an energy loss. Obviously,
repeatedly forcing the diode through reverse recovery
further increases switching losses. Therefore, one would
like a diode with short trr and low QRR specifications to
minimize these losses.
The abruptness of diode reverse recovery effects the
amount of radiated noise, voltage spikes, and current
ringing. The mechanisms at work are finite irremovable
circuit parasitic inductances and capacitances acted upon by
high di/dts. The diode’s negative di/dt during ta is directly
controlled by the device clearing the stored charge.
However, the positive di/dt during tb is an uncontrollable
diode characteristic and is usually the culprit that induces
current ringing. Therefore, when comparing diodes, the
ratio of tb/ta serves as a good indicator of recovery
abruptness and thus gives a comparative estimate of
probable noise generated. A ratio of 1 is considered ideal and
values less than 0.5 are considered snappy.
Compared to ON Semiconductor standard cell density
low voltage MOSFETs, high cell density MOSFET diodes
are faster (shorter trr), have less stored charge and a softer
reverse recovery characteristic. The softness advantage of
the high cell density diode means they can be forced through
reverse recovery at a higher di/dt than a standard cell
MOSFET diode without increasing the current ringing or the
noise generated. In addition, power dissipation incurred
from switching the diode will be less due to the shorter
recovery time and lower switching losses.
0.5
0.55
0.6
0.65
0.7
0.85
0
1
3
4
5
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
VGS = 0 V
TJ = 25°C
2
0.75
0.8


Nº de peça semelhante - MMSF5N02HDR2

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
Motorola, Inc
MMSF5N02HD MOTOROLA-MMSF5N02HD Datasheet
293Kb / 10P
   SINGLE TMOS POWER MOSFET 5.0 AMPERES 20 VOLTS
More results

Descrição semelhante - MMSF5N02HDR2

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
ON Semiconductor
MMDFS6N303 ONSEMI-MMDFS6N303 Datasheet
252Kb / 11P
   N-Channel SO-8 Power MOSFET
August, 2006 ??Rev. 3
MMDF4P03HD ONSEMI-MMDF4P03HD Datasheet
207Kb / 8P
   P-channel SO-8 Power MOSFET
August, 2006 ??Rev. 3
NTMS4816N ONSEMI-NTMS4816N Datasheet
94Kb / 5P
   Power MOSFET 30 V, 11 A, N-Channel, SO-8
December, 2007 - Rev. 0
logo
STMicroelectronics
STS3DNE60L STMICROELECTRONICS-STS3DNE60L Datasheet
71Kb / 5P
   N - CHANNEL 60V - 0.065ohm - 3A SO-8 STripFET POWER MOSFET
logo
ON Semiconductor
NTMFS4821N ONSEMI-NTMFS4821N_12 Datasheet
146Kb / 7P
   Power MOSFET 30V 58.5A Single N-channel, SO-8 FL
May, 2012 ??Rev. 4
logo
STMicroelectronics
STS10NF30L STMICROELECTRONICS-STS10NF30L Datasheet
44Kb / 6P
   N - CHANNEL 30V - 0.011ohm - 10A SO-8 STripFET POWER MOSFET
STS2DNE60 STMICROELECTRONICS-STS2DNE60 Datasheet
70Kb / 5P
   N - CHANNEL 60V - 0.180ohm - 2A SO-8 STripFET POWER MOSFET
STS5NF60L STMICROELECTRONICS-STS5NF60L Datasheet
68Kb / 5P
   N - CHANNEL 60V - 0.045ohm - 5A SO-8 STripFET POWER MOSFET
STS7NF30L STMICROELECTRONICS-STS7NF30L Datasheet
72Kb / 5P
   N - CHANNEL 30V - 0.021ohm - 7A SO-8 STripFET POWER MOSFET
logo
ON Semiconductor
NTMS4807N ONSEMI-NTMS4807N Datasheet
93Kb / 5P
   Power MOSFET 30 V, 14.8 A, N-Channel, SO-8
December, 2007 - Rev. 0
More results


Html Pages

1 2 3 4 5 6 7 8 9 10


Folha de dados Download

Go To PDF Page


Ligação URL




Privacy Policy
ALLDATASHEETPT.COM
ALLDATASHEET é útil para você?  [ DONATE ] 

Sobre Alldatasheet   |   Publicidade   |   Contato conosco   |   Privacy Policy   |   roca de Link   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com