STK730F datasheet(3/8 Pages) AUK

Nome de Peças	STK730F

Descrição Electrónicos	Advanced Power MOSFET

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Fabricante Electrônico	AUK [AUK corp]

Página de início	https:www.auk.co.kr

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3 / 8 page

KST-H037-000

3

STK730F

Electrical Characteristics (Tc=25°C unless otherwise specified)

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Drain-Source breakdown voltage

BVDSS

ID=250µA, VGS=0

400

V

Gate-Threshold voltage

VGS(th)

ID=250µA, VDS=5V

2.0

4.0

V

Drain-source leakage current

IDSS

VDS=400V

10

µA

Gate-source leakage

IGSS

VDS=0V, VGS=±30V

±100

nA

Drain-Source on-resistance

④

RDS(ON)

VGS=10V, ID=2.75A

1.0

Ω

Forward transconductance

④

gfs

VDS=50V, ID=2.75A

4.03

S

Input capacitance

Ciss

790

1000

Output capacitance

Coss

80

100

Reverse transfer capacitance

Crss

VGS=0V, VDS=25V, f=1MHz

20

26

pF

Turn-on delay time

td(on)

15

40

Rise time

tr

18

50

Turn-off delay time

td(off)

62

140

Fall time

tf

VDD=200V,ID=5.5A

RG=12Ω

④⑤

22

60

ns

Total gate charge

Qg

32

42

Gate-source charge

Qgs

4.6

Gate-drain(“Miller”)charge

Qgd

VDS=320V,VGS=10V,

ID=5.5A

④⑤

16.6

nC

Source-Drain Diode Ratings and Characteristics

Characteristic

Symbol

Test Condition

Min

Typ

Max

Units

Continuous source current

IS

5.5

Pulsed-source current

①

ISM

Integral reverse pn-diode

in the MOSFET

22

A

Diode forward voltage

④

VSD

TJ=25℃, VGS=0V, IS=5.5A

1.5

V

Reverse recovery time

trr

259

ns

Reverse recovery charge

Qrr

TJ=25℃,IF=5.5A

diF/dt=100A/us

④

1.81

uC

Note ;

①

Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

②

L=20mH, IAS=5.5A, VDD=50V, RG=27Ω , starting TJ=25℃

③

ISD ≤ 5.5A, di/dt≤ 140A/us, VDD≤ BVDSS, starting TJ=25℃

④

Pulse Test : Pulse Width=250us, Duty cycle≤ 2%

⑤

Essentially independent of operating temperature

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