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LB11867FV-MPB-E Folha de dados(PDF) 3 Page - ON Semiconductor |
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LB11867FV-MPB-E Folha de dados(HTML) 3 Page - ON Semiconductor |
3 / 11 page LB11867FV www.onsemi.com 3 Electrical Characteristics at Ta 25C, VCC = 12V Parameter Symbol Conditions Ratings Unit min typ max Circuit current ICC1 During drive 5.5 7.5 9.5 mA ICC2 During lock protection 5.5 7.5 9.5 mA 5VREG voltage 5VREG I5VREG = 5mA 4.80 4.95 5.10 V Current limiting voltage VLIM 185 200 215 mV CPWM pin “H” level voltage VCPWMH 2.8 3.0 3.2 V CPWM pin “L” level voltage VCPWML 0.9 1.1 1.3 V CPWM pin charge current ICPWM1 VCPWM = 0.5V 24 30 36 A CPWM pin discharge current ICPWM2 VCPWM = 3.5V 21 27 33 A CPWM Oscillation frequency FPWM C = 220PF 30 kHz CT pin “H” level voltage VCTH 2.8 3.0 3.2 V CT pin “L” level voltage VCTL 0.9 1.1 1.3 V CT pin charge current ICT1 VCT = 0.5V 1.6 2.0 2.5 μA CT pin discharge current ICT2 VCT = 3.5V 0.16 0.20 0.25 μA CT pin charge/discharge ratio RCT ICT1/ICT2 8 10 12 times S-S pin discharge current IS-S VS-S = 1V 0.4 0.5 0.6 A OUTN output H-level voltage VONH IO = 10mA VCC-0.85 VCC-1.00 V OUTN output L-level voltage VONL IO = 10mA 0.9 1.00 V OUTP output L-level voltage VOPL IO = 10mA 0.5 0.65 V Hall input sensitivity VHN IN+, IN- differential voltage (including offset and hysteresis) 10 20 mV FG output L-level voltage VFGL IFG = 5mA 0.15 0.30 V FG pin leakage current IFGL VFG = 19V 20 A VTH/RMI pin bias current IVTH/IRMI CPWM = VTH/RMI = 2V 0.1 A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. |
Nº de peça semelhante - LB11867FV-MPB-E |
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Descrição semelhante - LB11867FV-MPB-E |
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