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SI1145 Folha de dados(PDF) 6 Page - Silicon Laboratories

Nome de Peças SI1145
Descrição Electrónicos  Integrated infrared proximity detector
Download  70 Pages
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Fabricante Electrônico  SILABS [Silicon Laboratories]
Página de início  http://www.silabs.com
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Si1145/46/47-M01
6
Rev. 1.0
Table 2. Performance Characteristics1
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
IDD OFF Mode
Ioff
VDD < VDD_OFF (leakage from SCL,
SDA, and INT not included)
240
1000
nA
IDD Standby Mode
Isb
No ALS / PS Conversions
No I2C Activity
VDD = 1.8 V
150
500
nA
IDD Standby Mode
Isb
No ALS / PS Conversions
No I2C Activity
VDD = 3.3 V
1.4
μA
IDD Actively Measuring
Iactive
Without LED influence, VDD = 3.3 V
4.3
5.5
mA
Peak IDD while LED1,
LED2, or LED3 is Actively
Driven
VDD = 3.3 V
8
mA
LED Driver Saturation
Voltage2,3
Vdd = 1.71 to 3.6 V
PS_LEDn = 0001
PS_LEDn = 0010
PS_LEDn = 0011
PS_LEDn = 0100
PS_LEDn = 0101
PS_LEDn = 0110
PS_LEDn = 0111
PS_LEDn = 1000
PS_LEDn = 1010
PS_LEDn = 1010
PS_LEDn = 1011
PS_LEDn = 1100
PS_LEDn = 1101
PS_LEDn = 1110
PS_LEDn = 1111
50
60
70
80
115
150
185
220
255
290
315
340
360
385
410
70
105
105
105
450
450
450
450
450
450
600
600
600
600
600
mV
LED1, LED2, LED3
Pulse Width
tPS
25.6
30
μs
LED1, LED2, LED3, INT,
SCL, SDA
Leakage Current
VDD = 3.3 V
–1
1
μA
Notes:
1. Unless specifically stated in "Conditions", electrical data assumes ambient light levels < 1 klx.
2. Proximity-detection performance may be degraded, especially when there is high optical crosstalk, if the LED supply
and voltage drop allow the driver to saturate and current regulation is lost.
3. Guaranteed by design and characterization.
4. Represents the time during which the device is drawing a current equal to Iactive for power estimation purposes.
Assumes default settings.


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