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TS1107 Folha de dados(PDF) 10 Page - Silicon Laboratories |
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TS1107 Folha de dados(HTML) 10 Page - Silicon Laboratories |
10 / 22 page Table 3.3. AC Characteristics1 Parameter Symbol Conditions Min Typ Max Units CSA Buffer Output Settling time tOUT_s 1% Final value, VOUT = 1.3 V Gain = 20 V/V — 1.35 — msec Sign Comparator Propagation Delay tSIGN_PD VSENSE = ±1 mV — 3 — msec VSENSE = ±10 mV — 0.4 — msec Comparator Rising Propagation Delay tC_PDR Overdrive = 10 mV, CCOUT = 15 pF — 9 — μs Comparator Hysteresis VC_HYS CIN– falling — 20 — mV FET Control (TS1110 Only) FET Turn ON Time TFET(ON) See Note 2 — 0.255 — μs Note: 1. RS+ = RS– = 3.6 V, VSENSE = (VRS+ – VRS–) = 0 V, VDD = 3 V, VBIAS = 1.5 V. TA = TJ = –40 °C to +85 °C unless otherwise noted. Typical values are at TA = +25 °C. 2. Delay after comparator is triggered. Refer to FET ON Time vs. Gate Capacitance graph. Table 3.4. Thermal Conditions Parameter Symbol Conditions Min Typ Max Units Operating Temperature Range TOP –40 — +85 °C TS1107/10 Data Sheet Electrical Characteristics silabs.com | Smart. Connected. Energy-friendly. Rev. 1.0 | 9 |
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Descrição semelhante - TS1107 |
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