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TS1109-200IDT833 Folha de dados(PDF) 9 Page - Silicon Laboratories |
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TS1109-200IDT833 Folha de dados(HTML) 9 Page - Silicon Laboratories |
9 / 20 page Parameter Symbol Conditions Min Typ Max Units Output Low Voltage VSIGN_OL VDD = 1.8 V, ISINK = 35 µA — — 0.2 V Output High Voltage VSIGN_OH VDD = 1.8 V, ISOURCE = 35 µA VDD – 0.2 — — V Note: 1. RS+ = RS– = 3.6 V, VSENSE = (VRS+ – VRS–) = 0 V, VDD = 3 V, VBIAS = 1.5 V, FILT connected to 4 kW and 470 nF in series to GND. TA = TJ = –40 °C to +85 °C unless otherwise noted. Typical values are at TA = +25 °C. 2. Extrapolated to VOUT = VFILT. IRS+ + IRS– is the total current into the RS+ and the RS– pins. 3. Input offset voltage VOS is extrapolated from a VOUT(+) measurement with VSENSE set to +1 mV and a VOUT(–) measurement with VSENSE set to –1 mV; Average VOS = (VOUT(–) – VOUT(+))/(2 x GAIN). 4. Amplitude of VSENSE lower or higher than VOS required to cause the comparator to switch output states. 5. Gain error is calculated by applying two values for VSENSE and then calculating the error of the actual slope vs. the ideal transfer characteristic: For GAIN = 20 V/V, the applied VSENSE for GE± is ±25 mV and ±60 mV. For GAIN = 200 V/V, the applied VSENSE for GE± is ±2.5 mV and ±6 mV. Table 3.3. AC Characteristics Parameter Symbol Conditions Min Typ Max Units CSA Buffer Output Settling time tOUT_s 1% Final value, VOUT = 1.3 V Gain = 20 V/V — 1.35 — msec Sign Comparator Propagation Delay tSIGN_PD VSENSE = ±1 mV — 3 — msec VSENSE = ±10 mV — 0.4 — msec Table 3.4. Thermal Conditions Parameter Symbol Conditions Min Typ Max Units Operating Temperature Range TOP –40 — +85 °C TS1109 Data Sheet Electrical Characteristics silabs.com | Smart. Connected. Energy-friendly. Rev. 1.0 | 8 |
Nº de peça semelhante - TS1109-200IDT833 |
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Descrição semelhante - TS1109-200IDT833 |
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