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STP18N60DM2 Folha de dados(PDF) 4 Page - STMicroelectronics

Nome de Peças STP18N60DM2
Descrição Electrónicos  Extremely high dv/dt ruggedness
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP18N60DM2 Folha de dados(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STP18N60DM2
4/13
DocID027674 Rev 3
2
Electrical characteristics
(Tcase= 25 °C unless otherwise specified)
Table 5: Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
600
V
IDSS
Zero gate voltage drain
current
VGS = 0 V, VDS = 600 V
1.5
µA
VGS = 0 V, VDS = 600 V,
Tcase = 125 °C
100
µA
IGSS
Gate-body leakage
current
VDS = 0 V, VGS = ±25 V
±10
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
2
3
4
V
RDS(on)
Static drain-source on-
resistance
VGS = 10 V, ID = 6 A
0.260
0.295
Ω
Table 6: Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0 V
-
800
-
pF
Coss
Output capacitance
-
40
-
pF
Crss
Reverse transfer
capacitance
-
1.33
-
pF
Coss
eq.
(1)
Equivalent output
capacitance
VDS = 0 to 480 V, VGS = 0 V
-
80
-
pF
RG
Intrinsic gate resistance
f = 1 MHz, ID = 0 A
-
5.6
-
pF
Qg
Total gate charge
VDD = 480 V, ID = 12 A,
VGS = 10 V (see Figure 15:
"Test circuit for gate charge
behavior")
-
20
-
nC
Qgs
Gate-source charge
-
5.2
-
nC
Qgd
Gate-drain charge
-
8.5
-
nC
Notes:
(1)Coss eq. is defined as a constant equivalent capacitance giving the same charging time as COSS when VDS
increases from 0 to 80% VDSS
Table 7: Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 300 V, ID = 6 A
RG = 4.7
Ω, VGS = 10 V (see
Figure 14: "Test circuit for
resistive load switching times"
and Figure 19: "Switching time
waveform")
-
13.5
-
ns
tr
Rise time
-
8
-
ns
td(off)
Turn-off-delay time
-
9.5
-
ns
tf
Fall time
-
32.5
-
ns


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