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ACE1512E Folha de dados(PDF) 2 Page - ACE Technology Co., LTD.

Nome de Peças ACE1512E
Descrição Electrónicos  N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
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Fabricante Electrônico  ACE [ACE Technology Co., LTD.]
Página de início  http://www.ace-ele.com
Logo ACE - ACE Technology Co., LTD.

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ACE1512E
N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
VER 1.1
2
Ordering information
ACE1512EBMS + H
Electrical Characteristics
TA=25℃, unless otherwise specified.
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-source breakdown voltage
V(BR)DSS
VGS=0V, ID=250µA
20
V
Zero gate voltage drain current
IDSS
VDS=20V, VGS=0V
1
µA
Gate threshold voltage
VGS(th)
VGS=VDS, IDS=250µA
0.4
0.52
1
V
Gate leakage current
IGSS
VGS=±8V, VDS=0V
10
µA
Drain-source on-state resistance
RDS(ON)
VGS=4.5V, ID=6.5A
16.2
21
VGS=2.5V, ID=5.5A
19.4
25
VGS=1.8V, ID=5A
24.4
33
Forward transconductance
gFS
VDS=5V, ID=6.5A
13
S
Diode forward voltage
VSD
ISD=2.5A, VGS=0V
0.67
1.6
V
Maximum body-diode continuous current
IS
2.5
A
Switching
Total gate charge
Qg
VGS=4.5V, VDS=10V, ID=8A
13.8
17.94
nC
Gate-source charge
Qgs
4.1
5.33
Gate-drain charge
Qgd
5.6
7.28
Turn-on delay time
td(on)
VGS=5V, VDS=10V
RL=1.5
Ω, R
GEN=3
Ω
6.2
12.4
ns
Turn-on rise time
tr
12.7
25.4
Turn-off delay time
td(off)
51.7
103.4
Turn-off fall time
tf
16
32
Dynamic
Input capacitance
Ciss
VGS=0V, VDS=10V, f=1MHz
1160
pF
Output capacitance
Coss
104
Reverse transfer capacitance
Crss
29
Note :
A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
BMS : TSOT-23-3
Pb - free
Halogen - free


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